• Kazushi Yoshida,Ken Nitta,Hiromasa Ohmi,Kiyoshi Yasutake,Hiroaki Kakiuchi
  Plasma parameters in very high frequency helium and argon plasmas at atmospheric pressure
  Journal of Applied Physics 128, 133303 (2020)
  
  
• Hiroaki Kakiuchi, Hiromasa Ohmi and Kiyoshi Yasutake
  Pulsed very high-frequency plasma-enhanced chemical vapor deposition of silicon films for low-temperature (120°C) thin film transistors
  J.Phys.D:Appl.Phys.53,415201(2020)
  
  
• Keiichi Hamanaka, Norihisa Takei, Hiroaki Kakiuchi, Kiyoshi Yasutake and Hiromasa Ohmi
  The effect of pretreatment for SiH4 gas by microwave plasma on Si film formation behavior by thermal CVD
  Plasma Process Polym. 2020; el1900198 (11pp).
  
  

ICPE2020　（Nov.23-27 , 2020 Kobe , Japan ,virtual conference）

• 1. Toshimitsu Nomura, Kenta Kimoto, Hiroaki Kakiuchi, Kiyoshi Yasutake, Hiromasa Ohmi
  Surface nanostructuring of silicon by intermediate-pressure hydrogen plasma treatment
• 2. Shigeto Nawata, Masaya Maegawa, Hiromasa Ohmi, Hiroaki Kakiuchi, Kiyoshi Yasutake
  Study on the growth of silicon films at low temperatures in atmospheric-pressure plasmaexcited by very high-frequency power
• 3. Masaya Maegawa, Sigeto Nawata, Hiromasa Ohmi, Hiroaki Kakiuchi, Kiyoshi Yasutake
  Characterization of silicon oxide thin films deposited at low temperatures using anatmospheric-pressure plasma-enhanced chemical vapor deposition technology
• 4. Naoto Komatsu, Atsuhisa Togo, Hiroaki Kakiuchi, Kiyoshi Yasutake, Hiromasa Ohmi
  Diamond synthesis from graphite by hydrogen plasma induced chemical transport
• 5. Hiromichi Nakatsuka, Rei Tanaka, Hiroaki Kakiuchi, Kiyoshi Yasutake, Hiromasa Ohmi
  High-rate Preparation of Hydrophobic Fluorocarbon Film from CF4 Feedstock Gas by SolidSource Aided Plasma Chemical Vapor Deposition Technique
  
  

• Hiroaki Kakiuchi, Hiromasa Ohmi and Kiyoshi Yasutake
  Highly efficient formation process for functional silicon oxide layers at low temperatures (≤ 120 °C) using very high-frequency plasma under atmospheric pressure
  Precision Engineering, 60 (2019) 265-273.
  
  
• Hiromasa Ohmi, Jumpei Sato, Yoshiki Shirasu, Tatsuya Hirano, Hiroaki Kakiuchi, and Kiyoshi Yasutake
  Significant Improvement of Copper Dry Etching Property of a High-Pressure Hydrogen-Based Plasma by Nitrogen Gas Addition
  ACS Omega 2019, 4, 4360−4366
  
  

SSDM2019 (September 2-5, 2019 Nagoya, Japan)

• 1. H. Kakiuchi, H. Ohmi, K. Yasutake
  Atmospheric-Pressure Plasma-Enhanced Chemical Vapor Deposition of Silicon and Silicon Oxide Layers for Low-Temperature Thin Film Transistors
  
  

• Kakiuchi Hiroaki,Ohmi Hiromasa,Yasutake Kiyoshi
  Controllability of structural and electrical properties of silicon films grown in atmospheric-pressure very high-frequency plasma
  JOURNAL OF PHYSICS D-APPLIED PHYSICS，Vol. 51，No. 35（2018）
  
  
• N. Takei, F. Shinoda, H. Kakiuchi, K. Yasutake and H. Ohmi
  On-site SiH4 generator using hydrogen plasma generated in slit-type narrow gap
  J. Phys D: Appl. Phys. 51 (2018) 245203 (10pp).
  
  

• M. Shuto, H. Ohmi, H. Kakiuchi, T. Yamada and K. Yasutake
  Determination of plasma impedance of microwave plasma system by electric field simulation
  J. Appl. Phys. 122 (2017) 043303-1-8.
  
  
• H. Ohmi, H. Kakiuchi and K. Yasutake
  Study of the interaction between molten indium and sub-atmospheric pressure hydrogen glow discharge for low-temperature nanostructured metallic particle film deposition
  J. Alloys Compounds, 728 (2017) 1217-1225.
  
  

CIP MIATEC 2017 （June 26-30, 2017 Nice, France）

• 1. H. Kakiuchi, H. Ohmi, K. Yasutake
  Structural and electrical characterization of silicon and silicon oxide films prepared in atmospheric-pressure very high-frequency plasma at low temperatures.
• 2. H. Ohmi, N. Takei, K. Kimoto, H. Kakiuchi, K. Yasutake
  Toxic chemical-free Si etching by narrow gap hydrogen plasma toward Si wafer thinning process.
  
  

231st ECS Meeting （May 28-June 1, 2017 New Orieans, LA, USA)

• 1.H. Ohmi, H. Kakiuchi, K. Yasutake, and Y. Kubota
  High-Rate Etching of Copper By High-Pressure Hydrogen-Based Plasma
  
  

• H. Ohmi, J. Sato, T. Hirano, Y. Kubota, H. Kakiuchi and K. Yasutake
  Copper dry etching by sub-atmospheric-pressure pure hydrogen glow plasma
  Appl. Phys. Lett. 109 (2016) 211603-1-5.
  
  
• H. Kakiuchi, H. Ohmi, K. Yasutake
  Atmospheric-Pressure Low-Temperature Plasma Processes
  Encyclopedia of Plasma Technology November 16, 2016
  
  
• Hiromasa Ohmi, Daiki Kamada, Hiroaki Kakiuchi, and Kiyoshi Yasutake
  Selective Boron Elimination from B2H6–SiH4 Gas Mixtures for Purifying Si
  ECS J. Solid State Sci. Technol. 5，9, P471-P477 (2016)
  
  
• Hiromasa Ohmi, Hiroaki Kakiuchi, Kiyoshi Yasutake
  Magnesium hydride film formation using subatmospheric pressure H2 plasma at low temperature
  Journal of Vacuum Science & Technology B 34, 04J103 (2016)
  
  
• Takahiro Yamada, Hiromasa Ohmi, Hiroaki Kakiuchi, and Kiyoshi Yasutake
  Hydrogen atom density in narrow-gap microwave hydrogen plasma determined by calorimetry
  Journal of Applied Physics 119, 063301 (2016)
  
  

16th Joint Vacuum Conference (JVC-16) and 14th European Vacuum Conference (EVC-14),Bernardin Congress Centre in the Grand Hotel Bernardin, Portorož, Slovenia (June 6-10, 2016)

• 1. Hiromasa Ohmi, F. Shinoda, N. Takei, H. Kakiuchi, K. Yasutake
  On-site SiH4 generation using high-density microwave H2 plasma generated in narrow slit-type discharge gap
  
  

The 43rd Conference on the Physics and Chemistry of Surfaces and Interfaces (PCSI-43),Omni Rancho Las Palmas Resort, Rancho Mirage, Palm Springs, CA, USA (Jan. 17-21, 2016)

• 1. Hiromasa Ohmi, N. Masuya, T. Hori, H. Kakiuchi, and K. Yasutake
  Magnesium hydride film formation using a sub-atmospheric pressure H2 plasma at low temperature
  
  

• Hiromasa Ohmi, Takeshi Funaki, Hiroaki Kakiuchi and Kiyoshi Yasutake
  Efficiency of silane gas generation in high-rate silicon etching by narrow-gap microwave hydrogen plasma
  J. Physics D: Appl. Phys. 49 (2016) 035202(10pp).
  
  
• H. Kakiuchi, H. Ohmi, T. Yamada, S. Tamaki, T. Sakaguchi, W. Lin, and K. Yasutake
  Characterization of Si and SiOx films deposited in very high-frequency excited atmospheric-pressure plasma and their application to bottom-gate thin film transistors
  Phys. Stat. Sol. A 212, pp. 1571–1577 (2015).
  
  
• Hiromasa Ohmi, Hiroaki Kakiuchi, and Kiyoshi Yasutake
  Selective deposition of a crystalline Si film by a chemical sputtering process in a high pressure hydrogen plasma
  ournal of Applied Physics 118, 045301 (2015); (published online 22 July 2015)
  
  

EMN Hong Kong meeting 2015, Eaton Hotel, Kowloon, Hong Kong (Dec. 9-12, 2015)

• 1. Takahiro Yamada, Hiromasa Ohmi, Hiroaki Kakiuchi, and Kiyoshi Yasutake
  H Atom Density Diagnostics in High-Pressure Microwave Hydrogen Plasma by Power Balance Calorimetry and Actinometry
  
  

TACT 2015 International Thin Films Conference, National Cheng Kung University, Tainan, Taiwan (Nov. 15-18, 2015)

• 1. H. Ohmi, H. Kakiuchi, and K. Yasutake
  High-rate metal evaporation induced by high-pressure hydrogen glow discharge plasma and its application to formation of metallic fine particle and porous film
• 2. H. Takemoto, Y. Ishikawa, H. Kakiuchi, K. Yasutake and H. Ohmi
  Impact of catalytic metal element on silicon nanowire growth by high-pressure hydrogen plasma chemical transport
  
  

EuroCVD 20 – 20th BIENNIAL European Conference on Chemical Vapor Deposition, Sempach, Switzerland (July 13–17, 2015)

• 1. H. Kakiuchi, H. Ohmi, T. Yamada, W. Lin, T. Sakaguchi, S. Tamaki, and K. Yasutake
  Investigation on the deposition characteristics of silicon and silicon oxide thin films in atmospheric-pressure very high-frequency plasma for their application to thin film transistors
  
• 2. T. Sakaguchi, S. Tamaki, W. Lin, T. Yamada, H. Ohmi, H. Kakiuchi, K. Yasutake
  Silicon oxide thin films prepared with high rates at room temperature using atmospheric-pressure very high-frequency plasma
  
• 3. S. Tamaki, T. Sakaguchi, W. Lin, T. Yamada, H. Ohmi, H. Kakiuchi, K. Yasutake
  Study on the growth of silicon films in very high-frequency plasma under atmospheric pressure
  
  

ISPC 2015 – 22nd International Symposium on Plasma Chemistry, University of Antwerp, Belgium (July 5–10, 2015).

• 1. H. Kakiuchi, H. Ohmi, S. Tamaki, T. Sakaguchi, W. Lin, and K. Yasutake
  Characterization of Si films deposited at 220 C in atmospheric-pressure very high-frequency plasma and their application to thin film transistors
  
  

• Hiroaki Kakiuchi, Hiromasa Ohmi and Kiyoshi Yasutake
  Atmospheric-pressure low-temperature plasma processes for thin film deposition
  J. Vac. Sci. Technol. A32 (2014) 030801-1-16.
  
  

2nd KANSAI Nanoscience and Nanotechnology International Symposium, Knowledge Capital Congres Convention Center, Osaka, Japan (December 10–11, 2014)

• 1.T. Sakaguchi, S. Tamaki, W. Lin, T. Yamada, H. Ohmi, H. Kakiuchi, and K. Yasutake
  Room Temperature Deposition of Silicon Oxide Films with High Rates Using Atmospheric-Pressure Very High-Frequency Plasma　　　
• 2.S. Tamaki, T. Sakaguchi, W. Lin, T. Yamada, H. Ohmi, H. Kakiuchi, and K. Yasutake
  Low Temperature Deposition of Silicon Films Using Very High-Frequency Plasma under Atmospheric Pressure
  
  

The 6th World Conference on Photovoltaic Energy Conversion (Nov. 23-27, 2014, Kyoto, Japan)

• 1. T. Yamada, K. Yamada, T. Hirano, H. Ohmi, H. Kakiuchi and K. Yasutake
  Development of Low-Cost Production Process for High-Purity SiH4 Based on Hydrogen Plasma Etching of Metallurgical-Grade Si: Optimization of Surface Temperature and H2 Flow Rate on Si Etch Rate
  
  

29th European PV Solar Energy Conference (Sep. 22-26, 2014 Amsterdam, Netherlands) 3DV4.44

• 1. Hiromasa Ohmi, Hiroaki Kakiuchi and Kiyoshi Yasutake
  High rate and chamber cleaning free deposition process for crystalline silicon film by high pressure hydrogen plasma induced chemical transport technique　
  　

13th European Vacuum Conference (Sep. 8-12, 2014 Aveiro, Portugal) 13th EVC Book of Abstracts, p13

• 1. Hiromasa Ohmi, Hiroaki Kakiuchi, and Kiyoshi Yasutake
  SiH4 conversion rate in Si etching reaction induced by high-pressure hydrogen plasma
  
  

225th ECS Meeting (May 11-15, 2014 Orlando, FL, USA)

• 1. H. Ohmi, H. Kakiuchi, and K. Yasutake
  Boron Elimination Filter from SiH4 and B2H6 Gas Mixture for Purification of Metallurgical Si
  
  

International Workshop on Atomically Controlled Fabrication Technology (Feb. 5-6, 2014 Osaka, Japan)

• 1.M. Shuto, T. Tsushima, H. Ohmi, H. Kakiuchi and K. Yasutake
  Simulation of capacitively coupled Ar plasma generated at atmospheric pressure (Oral)
• 2.W. Lin, K. Okamura, T. Sakaguchi, T. Yamada, H. Ohmi, H. Kakiuchi and K. Yasutake
  Low temperature and High-Rate Deposition of Si Films Using Atmospheric-Pressure Very High-Frequency Plasma
  -Fabrication and Characterization of Bottom-Gate Thin Film Transistors-
• 3.Y. Fujiwara, Y. Kanetani, T. Yamada, H.　Ohmi, H.　Kakiuchi, K. Yasutake
  Development of Open Air Plasma Oxidation Process for Crystalline Si Solar Cells
  　　　　

Abst. 1st KANSAI Nanoscience and Nanotechnology International Symposium, 110
(Feb. 3-4, 2014, Osaka, Japan)

• 1.K. Yamada, T. Adachi, T. Yamada, H. Ohmi, H. Kakiuchi, and K. Yasutake
  Calorimetry Study of Degree of Dissociation in Narrow-Gap Microwave Hydrogen Plasma for High-Rate Si Etching
  
  

• H. Kakiuchi, H. Ohmi, T. Yamada, A. Hirano, T. Tsushima, W. Lin, and K. Yasutake
  Effective phase control of silicon films during high-rate deposition in atmospheric-pressure very high-frequency plasma: Impacts of gas residence time on the performance of bottom-gate thin film transistors
  Surf. Coat. Technol. 234, pp. 2–7 (2013)
  
  
• Takahiro Yamada, Hiromasa Ohmi, Hiroaki Kakiuchi & Kiyoshi Yasutake
  Effect of H2 Flow Rate on High-Rate Etching of Si by Narrow-Gap Microwave Hydrogen Plasma
  Plasma Chem Plasma Process (2013) 33: 797-806
  
  
• Z. Zhuo, Y. Sannomiya, Y. Kanetani, T. Yamada, H. Ohmi, H. Kakiuchi and K. Yasutake
  Interface properties of SiOxNy layer on Si prepared by atmospheric-pressure plasma oxidation-nitridation
  Nanoscale Research Letters 2013, 8:201
  
  
• Mitsutoshi Shuto, Fukumi Tomino, Hiromasa Ohmi, Hiroaki Kakiuchi, Kiyoshi Yasutake
  Voltage distribution over capacitively coupled plasma electrode for atmospheric-pressure plasma generation
  Nanoscale Research Letters 2013, 8:202
  
  
• H. Kakiuchi, H. Ohmi, T. Yamada, A. Hirano, T. Tsushima, and K. Yasutake
  Study on the Growth of Microcrystalline Silicon Films in Atmospheric-Pressure VHF Plasma Using Porous Carbon Electrode
  J. Phys.: Conference Series 417 (2013) 012052.
  
  
• H. Kobayashi, H. Kakiuchi, K. Yasutake, T. Suzuki, M. Noborisaka, and N. Negishi
  Deposition of Functional Membranes by Through-Substrate Plane-Plate Dielectric-Barrier Discharge
  J. Phys.: Conference Series 441 (2013) 012024.
  
  

TACT 2013 International Thin Films Conference (Oct. 5-9, 2013 Taipei, Taiwan)

• 1.H.Ohmi, H. Kakiuchi, K. Yasutake
  TACT 2013 International Thin Films Conference (Oct. 5-9, 2013 Taipei, Taiwan)
  
  

19th International Vacuum Congress IVC-19（September 9-13, 2013 Pris, France）

• H.Ohmi, H. Kakiuchi, K. Yasutake
  selective formation of silicon film by chemical transport technique using a high-pressure narrow-gap hydrogen plasma
  
  

• T. Yamada, H. Ohmi, K. Okamoto, H. Kakiuchi, and K. Yasutake
  Effects of Surface Temperature on High-Rate Etching of Silicon by Narrow-Gap Microwave Hydrogen Plasma
  Jpn. J. Appl. Phys. 51, 10NA09 (2012)
  
  
• Y. Hirai, T. Yamada, M. Kondow, and F. Ishikawa
  Characterization of the Oxide Film Obtained by Wet Oxidation of Al-Rich AlGaAs
  Jpn. J. Appl. Phys. 51, 02BG10-1－02BG10-4 (2012)
  
  
• Z. Zhuo, Y. Sannomiya, K. Goto, T. Yamada, H. Ohmi, H. Kakiuchi, K. Yasutake
  Formation of SiO2/Si structure with low interface state density by atmospheric-pressure VHF plasma oxidation
  Current Appl. Phys. 12 S57-S62 (2012)
  
  
• H. Kakiuchi, H. Ohmi, T. Yamada, K. Yokoyama, K. Okamura, and K. Yasutake
  Silicon Oxide Coatings with Very High Rates (>10 nm/s) by Hexamethildisiloxane-Oxygen Fed Atmospheric-Pressure VHF Plasma: Film-Forming Behavior Using Cylindrical Rotary Electrode
  Plasma Chem. Plasma Process. 32, 533-545 (2012)
  
  
• H. Kakiuchi, K. Higashida, T. Shibata, H. Ohmi, T. Yamada, and K. Yasutake
  High-Rate HMDSO-Based Coatings in Open Air Using Atmospheric-Pressure Plasma Jet
  J. Non-Cryst. Solids 358, 2462-2465 (2012)
  
  

Abstract book of ninth international conference on reactive sputtering deposition p. 51.
(Dec. 13-14, 2012, Ghent, Belgium)

• 1.H.Ohmi, H. Kakiuchi, K. Yasutake
  Low temperature synthesis of SiC film by narrow gap chemical sputtering of Si and Graphite targets
  
  

8th Handai Nanoscience and Nanotechnology International Symposium, Icho-Kaikan, Osaka University
(Dec. 10-11, 2012, Osaka,Japon)

• 1.K. Inagaki, Y. Morikawa and K. Yasutake
  First-principles Analysis of Etching Rate of Si by Hydrogen Radical
• 2.H. Kakiuchi, H. Ohmi, T. Yamada, A. Hirano, T. Tsushima, and K. YasutakeHighly Efficient Formation Technology for Si-Based Functional Thin Films at Low Temperatures Using Atmospheric-Pressure Very High-Frequency Plasma
  
  

Abst. 59th AVS International Symposium PS+TC-WeM3 (Oct. 28-Nov. 2, 2012, Tampa, USA)

• １.K. Yasutake, H. Ohmi, T. Yamada, H. Kakiuchi
  Atmospheric Pressure Plasma Processes for Preparation of Si-Based Thin Films <Invited>
• 2.H. Kakiuchi, H. Ohmi, T. Yamada, A. Hirano, T. Tsushima, and K. Yasutake
  Characterization of Amorphous and Microcrystalline Si Films Grown in Atmospheric-Pressure Very High-Frequency Plasma
  
  

Ext. Abst. 5th International Symposium on Atomically Controlled Fabrication Technology
(Oct. 22-24, 2012, Osaka, Japan)

• 1.K. Yasutake, H. Ohmi, T. Yamada, and H. Kakiuch
  Atmosperic-Pressure Plasma Processing for Si Photovoltaics
• ２.H. Kakiuchi, H. Ohmi, T. Yamada, and K. Yasutake
  Highly Efficient Formation of Amorphous and Microcrystalline Silicon Films at Low Temperatures Using Atmospheric-Pressure Very High-Frequency Plasma
• ３.Z. Zhuo, Y. Sannomiya, Y. Kanetani, Y. Fujiwara, T. Yamada, H. Ohmi, H. Kakiuchi, and K. Yasutake
  Formation of Passivation Films for Si Surfaces by Atmospheric-Pressure VHF Plasma Oxidation
• 4.T. Yamada, K. Yamada, H. Ohmi, H. Kakiuchi, and K. Yasutake
  H2 Flow Rate Dependence of High-Rate Etching of Si by Narrow-Gap Microwave Hydrogen Plasma
• 5.N. Masuya, H. Kakiuchi, K. Yasutake, and H. Ohmi
  Effect of plasma drive frequency on crystalline Si etching behavior in PFC-free high pressure dry etching method
  
• 6.K. Okamura, K. Yokoyama, T. Yamada, H. Ohmi, H. Kakiuchi, and K. Yasutake
  Silicon Oxide Depositions with High Rates at Room Temperature from Hexamethyldisiloxane Using Atmospheric-Pressure VHF Plasma
• 7.Y. Onoshita, H. Kakiuchi, K. Yasutake, and H. Ohmi
  Chamber cleaning-free Si formation process with high deposition rate by narrow gap plasma enhanced chemical transport
• 8.T. Tsushima, A. Hirano, T. Yamada, H. Ohmi, H. Kakiuchi, and K. Yasutake
  Characterization of Si Films Prepared with Very High Rates Using Atmospheric-Pressure Very High-Frequency Plasma
• 9.M. Shuto, F. Tomino, H. Kakiuchi, and K. Yasutake
  Calculation of Voltage Distribution over CCP Electrode during Atmospheric-Pressure Plasma Generation
• 10.Y. Mizuno, M. Nagashima, T. Yamada, H. Ohmi, H. Kakiuchi, and K. Yasutake
  Structural Characterization of Zinc Oxide Films Prepared in Atmospheric-Pressure Radio Frequency Plasma
  
  

11th APCPST (Asia Pacific Conference on Plasma Science and Technology) and 25th SPSM
(Symposium on Plasma Science for Materials) 3T-O05 (Oct. 2-5, 2012, Kyoto, Japan)

• 1.H. Kobayashi, H. Kakiuchi, K. Yasutake, T. Suzuki, M. Noborisaka, N. Negishi
  Deposition of Functional Membranes by Through-Substrate Surface Discharge
  
  

2012 Kyrgyz-Japan Solar Energy Workshop (July 10-12, 2012, Bishkek, Kyrgyz)

• 1.K. Yasutake
  Recent Advances in Si Solar Cell Technology <Invited>
• 2. <Invited> K. Yasutake, H. Ohmi, T. Yamada and H. Kakiuchi
  Atmospheric Pressure Plasma Processing for Si Photovoltaics
  
  

• H. Ohmi, T. Hori, T. Mori, H. Kakiuchi, and K. Yasutake
  Low-temperature synthesis of microcrystalline 3C-SiC film by high-pressure hydrogen-plasma-enhanced chemical transport
  J. Phys. D: Appl. Phys. 44, 235202(8pp) (2011)
  
  
• K. Inagaki, R. Kanai, K. Hirose, and K. Yasutake
  First-Principles Molecular-Dynamics Calculations on Chemical Reactions and Atomic Structures Induced by H Radical Impinging onto Si (001) 2 × 1: H Surface
  J. Nanosci. Nanotechnol. 11, 2952-2955 (2011)
  
  
• H. Kakiuchi, H. Ohmi, and K. Yasutake
  Study on the Growth of Heteroepitaxial Cubic Silicon Carbide Layers in Atmospheric-Pressure H2-Based Plasma
  J. Nanosci. Nanotechnol. 11, 2903-2909 (2011)
  
  
• K. Nakamura, Y. Yamaguchi, K. Yokoyama, K. Higashida, H. Ohmi, H. Kakiuchi, and K. Yasutake
  Room-Temperature Formation of Low Refractive Index Silicon Oxide Films Using Atmospheric-Pressure Plasma
  J. Nanosci. Nanotechnol. 11, 2851-2855 (2011)
  
  
• H. Watanabe, H. Ohmi, H. Kakiuchi, T. Hosoi, T. Shimura, and K.Yasutake
  Surface Cleaning and Etching of 4H-SiC (0001) Using High-Density Atmospheric Pressure Hydogen Plasma
  J. Nanosci. Nanotechnol. 11, 2802-2808 (2011)
  
  
• Y. Kuwahara, A. Saito, K. Arima, and H. Ohmi
  Center of Excellence for Atomically Controlled Fabrication Technology
  J. Nanosci. Nanotechnol. 11, 2763-2776 (2011)
  
  
• K. Yasutake, H. Kakiuchi, H. Ohmi, K. Inagaki, Y. Oshikane and M. Nakano
  An atomically controlled Si film formation process at low temperatures using atmospheric-pressure VHF plasma　
  J. Phys.: Condens. Matter 23 (2011) 394205 (22pp).
  
  
• H. Ohmi, T. Yamada, H. Kakiuchi, and K. Yasutake
  Purified Silicon Film Formation from Metallurgical-Grade Silicon by Hydrogen Plasma Induced Chemical Transport
  Jpn. J. Appl. Phys. 50 (2011) 08JD01-1-6
  
  

21st International Photovoltaic Science and Engineering Conference
(Nov. 28-Dec. 2, 2011, Fukuoka, Japan) p.68.

• 1.T. Yamada, K. Okamoto, H. Ohmi, H. Kakiuchi, and K. Yasutake
  Effects of Surface Temperature on High-Rate Etching of Silicon by Narrow-Gap Microwave Hydrogen Plasma
  
  

TACT2011 International Thin Films Conference (Nov. 20-23, 2011, Kenting Taiwan), A20111019002

• 1.H. Ohmi, H. Kakiuchi, and K. Yasutake
  Chemical transport technique in high-pressure plasma for crystalline Si based　solar cell <Invited>
  
  

ITFPC-MIATEC 2011，Innovations in Thin Film Processing and Characterisation &Magnetron, Ion processing andArc Technologies European Conference (Nov. 14-17, 2011, Nancy, France), p.p. 60

• 1.H. Ohmi, T. Yamada, H. Kakiuchi, and K. Yasutake
  Purified epitaxial Si film made from low-purity Si feedstock by high-pressure plasma gasification method (Oral)
  
  

Abst. 15th International Conference on Thin Films, 2011 (Nov. 8-11, 2011, Kyoto, Japan)

• 1.H. Kakiuchi, H. Ohmi, T. Yamada, A. Hirano, T. Tsushima, K. Yasutake
  Study on the Growth of Hydrogenated Amorphous and Microcrystalline Silicon Films Deposited with High Rates Using Atmospheric-Pressure VHF Plasma (P.53.)
• 2.Y. Sannnomiya, K. Goto, ZT. Zhuo, Y. Kanetani, T. Yamada, H. Ohmi, H. Kakiuchi, K. Yasutake
  Atmospheric-Pressure Plasma Oxidation Process for Si Surface Passivation (P.54.)
• 3.K. Yokoyama, K. Okamura, T. Yamada, H. Ohmi, H. Kakiuchi, K. Yasutake
  Structural Characterization of Room-Temperature Silicon Oxides Deposited from Hexamethyldisiloxane-Oxygen Mixtures Using Atmospheric-Pressure VHF Plasma (P54)　
  
  

Ext. Abst. 4th Int. Symp. on Atomically Controlled Fabrication Technology
(Oct. 31-Nov. 2, 2011, Osaka, Japan).

• 1.K. Yasutake, H. Ohmi, T. Yamada and H. Kakiuchi
  Atmospheric-Pressure Plasma Processes for Efficient Formation of Functional Thin Films at Low-Temperatures (pp.38-39.)
  
• 2.K. Inagaki , K. Hirose, Y. Morikawa and K. Yasutake
  First-principles analysis on Si(001) etching by hydrogen radicals (pp.40-41.)
• 3.ZT. Zhuo, K. Goto, Y. Sannomiya, Y. Kanetani, T. Yamada, H. Ohmi, H. Kakiuchi and K. Yasutake
  Formation of SiOxNy Films for Passivation of Si Surfaces by Atmospheric-Pressure Plasma Oxidation (pp.228-229.)　　　
• 4.K. Yokoyama, K. Okamura, T. Yamada, H. Ohmi, H. Kakiuchi and K. Yasutake
  Silicon Oxide Anti-Reflection Coatings from Hexamethyldisiloxane at Room Temperature Using Atmospheric-Pressure VHF plasma
  (pp.230-231.)
  
• 5.S. Mine, K. Okamura, T. Yamada, H. Ohmi, H. Kakiuchi and K. Yasutake
  Fundamental Study on the Film Growth from Organometallic precursors Using Atmospheric-Pressure Radio-Frequency Plasma
  (pp.232-233.)　　　
• 6.K. Higashida, T. Shibata, T. Yamada, H. Ohmi, H. Kakiuchi and K. Yasutake
  Deposition Characteristics of Silicon Oxides in Open Air Using Atmospheric-Pressure Plasma Jet (pp.234-235.)　　　
• 7.T. Yamada, K. Okamoto, H. Ohmi, H. Kakiuchi and K. Yasutake
  Effects of Substrate Temperature on High-Rate Etching of Silicon by Microwave H2 Plasma (pp.236-237.)
• 8.A. Hirano, T. Tsushima, T. Yamada, H. Ohmi, H. Kakiuchi and K. Yasutake
  Influence of the Electrode Configuration on the Growth of Microcrystalline Si Films in Atmospheric-Pressure Very High-Frequency Plasma
  (pp.238-239.
  
  

Proc. 2011 Korea & Japan Symposium on Solar Cells, (Sep. 26-27, 2011, Mokpo city, Korea)

• 1.<Invited>K. Yasutake, H. Kakiuchi, T. Yamada and H. Ohmi
  New Formation Processes for Solar-Grade Si and TCO Films Using Atmospheric-Pressure Plasma Technology Invited
• 2.<Invited>H. Kakiuchi, H.Ohmi, T. Yamada, and K.Yasutake
  High-Rate Deposition of Amorphous and Microcrystalline Si Films Using Atmospheric-Pressure VHF Plasma
  　　　

Book of Abst. of The 24rd Int. Conf. on Amorphous and Nanocrystalline Semiconductors (ICANS 24)
(Aug. 21-26, 2011, Nara, Japan)

• 1.S. Mine, S. Okazaki, T. Yamada, H. Ohmi, H. Kakiuchi, and K. Yasutake
  Growth and Properties of Zinc Oxide Films Prepared in Atmospheric-Pressure Radio Frequency Plasma (p.152.)
  
• 2.K. Higashida, K. Nakamura, T. Shibata, T. Yamada, H. Ohmi, H. Kakiuchi and K. Yasutake
  Deposition Characteristics of Silicon Oxides in Open Air Using Atmospheric-Pressure Plasma Jet (p.156.)
  
  

18th International Colloquium on Plasma Processes (CIP2011), (July 4-8, 2011, Nantes, France)

• 1.H. Ohmi, K. Umehara, H. Kakiuchi, K. Yasutake
  Surface treatment for crystalline Si solar cell using a solid source high-pressure plasma etching method: texturing and affected layer removal (CIP 11 Abstract booklet pp.189)
  
  

• H. Kakiuchi, H. Ohmi, Y. Yamaguchi, K. Nakamura and K. Yasutake
  Low refractive index silicon oxide coatings at room temperature using atmospheric-pressure very high-frequency plasma
  Thin Solid Films 519 (2010) 235-239.
  
  
• Hiromasa Ohmi, Yoshinori Hamaoka, Daiki Kamada, Hiroaki Kakiuchi and Kiyoshi Yasutake
  Formation of microcrystalline SiC films by chemical transport with a high-pressure glow plasma of pure hydrogen
  Ｔhin Solid Films 519 (2010) 11-17.
  
  
• Hiroaki Kakiuchi, Hiromasa Ohmi, Kei Nakamura, Yoshihito Yamaguchi and Kiyoshi Yasutake
  Room-Temperature Silicon Nitrides Prepared with Very High Rates (> 50 nm/s) in Atmospheric-Pressure Very High-Frequency Plasma
  Plasma Chem. Plasma Process 30 (2010) 579-590.
  
  
• H. Ohmi, K. Kishimoto, H. Kakiuchi and K. Yasutake
  PFC-Free Dry Etching Method for Si Using Narrow-Gap VHF Plasma at Subatmospheric Pressure
  J. Electrochem Soc. 157 (2010) D85-D89.
  
  
• Y. Yamaguchi, K. Nakamura, H. Ohmi, H. Kakiuchi and K. Yasutake
  Investigation of structural properties of high-rate deposited SiNx films prepared at low temperatures (100–300 C) by atmospheric-pressure plasma CVD
  Phys. Stat. Sol. C 7, 824-827 (2010).
  
  
• K. Ouchi, K. Tabuchi, H. Ohmi, H. Kakiuchi and K. Yasutake
  Characterization of microcrystalline Si films deposited at low temperatures with high rates by atmospheric-pressure plasma CVD
  Phys. Stat. Sol. C 7, 545-548 (2010).
  
  

9th Int. Conf. on Reactive Sputter Deposition (Dec. 9-10, 2010, Ghent, Belgium)

• 1.H. Ohmi, A. Goto, H. Kakiuchi, and K Yasutake
  Structural and electrical property of Si film prepared by chemical sputtering in a hydrogen plasma at sub atmospheric-pressure
  (>100 Torr)(P4.)
  
  

Ext. Abst. 3rd Int. Symp. on Atomically Controlled Fabrication Technology (Nov. 24-26, 2010, Osaka)

• 1.H. Ohmi
  Plasma Enhanced Chemical Transport Technique at High Pressure for Si Based Photovoltaic Device Fabrication
  - Technology Status and Prospect - (pp.52-53)
  
• 2.K. Inagaki, K. Hirose, Y. Morikawa and K. Yasutake
  First-principle Analysis Silicon Etching by Hydrogen Radical -Diffusion of Absorbed Hydrogen Atom on Si(001) 2x1 Surface- (pp.92-93)
  
• 3.K. Higashida, K. Nakamura, T. Shibata, T. Yamada, H. Ohmi, H. Kakiuchi and K. Yasutake
  Open Air Deposition of Silicon Oxide Films at Room Temperature Using Atmospheric-Pressure Plasma Jet (pp.108-109)
• 4.T. Yamada, H. Ohmi, H. Kakiuchi and K. Yasutake
  High Speed Etching of Si by VHF Subatmospheric Pressure Hydrogen Plasma (pp.196-197)
  
• 5.A. Goto, K. Umehara, H. Kakiuchi, K. Yasutake and H. Ohmi
  Study on the Properties of Poly-Si Films by Using Atmospheric-pressure Plasma Enhanced Chemical Transport (pp.198-199)
  
• 6.K. Umehara, K. Yasutake, K. Kishimoto, H. Kakiuchi and H. Ohmi
  Study on Plasma Etching Method for Si by Utilizing a Solid Fluoropolymer as On-site Etchant Generator (pp.204-205)
• 7.T. Hori, T. Mori, H. Kakiuchi, K. Yasutake and H. Ohmi
  Study on the Structure and Electrical Properties of m-SiC films Prepared by Plasma Enhanced Chemical Transport at Sub-atmospheric Pressure (pp.206-207)
• 8.Z. T. Zhuo, T. Ohnishi, K. Goto, Y. Sannomiya, H. Ohmi, H. Kakiuchi and K. Yasutake
  Development of Atmospheric-Pressure Plasma Oxidation Process for Surface Passivation of Si (pp.208-209)
  
• 9.K. Tabuchi, A. Hirano, T. Yamada, H. Ohmi, H. Kakiuchi and K. Yasutake
  Influence of Process Parameters on the Material Properties of Microcrystalline Si Prepared Using Atmospheric-Pressure Very High-Frequency Plasma (pp.210-211)
  
• 10.K. Yokoyama, Y. Mizuno, T. Yamada, H. Ohmi, H. Kakiuchi and K. Yasutake
  Structural Characterization of Room-Temperature Silicon Oxides Deposited from Hexamethyldisiloxane-Oxygen Mixtures at Room Temperature Using Atmospheric-Pressure VHF Plasma (pp.212-213)
  
  

Abst. 32nd Int. Symp. on Dry Process (Nov. 11-12, 2010, Tokyo Tech)

• 1.<Invited> H. Kakiuchi, H. Ohmi, K. Yasutake
  Atmospheric-Pressure Plasma Technology for the High-Rate and Low-Temperature Deposition of Si Thin Films (pp.3-4.)
  
  

Conf. Proc. 7th ICRP and 63rd GEC, (Oct. 4-8, 2010, Paris)

• 1.Z.T. Zhuo, T. Ohnishi, K. Goto, Y. Sannomiya, H. Ohmi, H. Kakiuchi and K. Yasutake
  Atmospheric-Pressure Plasma Oxidation Process for Passivation of Si Surface (CTP-090.)
  2.Hiroaki Kakiuchi, Hiromasa Ohmi, and Kiyoshi Yasutake
  Room-Temperature Deposition of Silicon Nitride Films with Very High Rates Using Atmospheric-Pressure Plasma Chemical Vapor Deposition
  (CTP-183.)
• 3.Hiromasa Ohmi, Tetsuya Mori, Takahiro Hori, Hiroaki Kakiuchi, and Kiyoshi Yasutake
  Synthesis of microcrystalline SiC film at low temperature (≤ 600°C) by hydrogen plasma chemical transport at sub atmospheric pressure
  (DTP-037.)
  
• 4.<Invited> Kiyoshi Yasutake, Hiromasa Ohmi, Hiroaki Kakiuchi
  Purified Si Film Formation from Metallurgical-Grade Si by Hydrogen Plasma Induced Chemical Transport (VF2-001.)
  
  

Abst. 2010 MRS Spring Meeting, Symposium A: Amorphous and Polycrystalline Thin-Film Silicon Science andTechnology–2010, San Francisco, April 6-9, 2010.

• 1.<Invited> K. Yasutake, H. Ohmi and H. Kakiuchi
  Chemical Transport Deposition of Purified Poly-Si Films from Metallurgical-Grade Si Using Subatmospheric-Pressure H2 Plasma (A10.1)
  
  

Abst. The 3 rd Int. Conf. on Plasma Nanotechnology & Science (IC-PLANTS 2010), Nagoya, March 11-12, 2010.

• 1.<Invited> K. Yasutake, H. Ohmi and H. Kakiuch
  New Formation Process of Solar-Grade Si from Metallurgical-Grade Si by Chemical Transport in Near Atmospheric-Pressure Plasma (I-01)
  
  

• H. Ohmi, A. Goto, D. Kamada, Y. Hamaoka, H. Kakiuchi and K. Yasutake
  Purified Si film formation from metallurgical-grade Si by hydrogen plasma induced chemical transport
  Appl. Phys. Lett. 95 (2009) 181506-1-3.
  
  
• H. Kakiuchi, H. Ohmi, K. Ouchi, K. Tabuchi and K. Yasutake
  Microcrystalline Si films grown at low temperatures (90-220 C) with high rates in atmospheric-pressure VHF plasma
  J. Appl. Phys. 106 (2009) 013521 1-6.
  
  
• T. Ohnishi, Y. Kirihata, H. Ohmi, H. Kakiuchi and K. Yasutake
  In Situ Doped Si Selective Epitaxial Growth at Low Temperatures by Atmospheric Pressure Plasma CVD
  ECS Transactions 25 (2009) 309-315.
  
  
• K. Tabuchi, K. Ouchi, H. Ohmi, H. Kakiuchi and K. Yasutake
  Characterization of High-Rate Deposited Microcrystalline Si Films Prepared Using Atmospheric-Pressure Very High-Frequency Plasma
  ECS Transactions 25 (2009) 405-412.
  
  
• H. Sekimoto, Y. Nose, T. Uda, S. Sato, H. Kakiuchi and Y. Awakura
  Reduction of titanium oxide in the presence of nickel by nonequilibrium hydrogen gas
  J. Mater. Res. 24 (2009) 2391-2399.
  
  

Ext. Abst. 2nd Int. Symp. on Atomically Controlled Fabrication Technology, (Nov. 25-26, 2009, Osaka.)

• 1.K. Yasutake, H. Ohmi, K. Inagaki and H. Kakiuchi
  New Formation Process of Solar-Grade Si Material Based on Atmospheric-Pressure Plasma Science (pp.24-25)
• 2.K. Inagaki, R. Kanai, H. Hirose and K. Yasutake
  First-Principles Molecular-Dynamics Simulation of Reaction in CVD Si Epitaxial Thin Film Growth Process – Hydrogen Coverage Dependence on Incident Radical Temperature – (pp.118-119)
• 3.A. Goto, D. Kamada, H. Kakiuchi, K. Yasutake and H. Ohmi
  Epitaxial Growth of Si ay Low Temperature (< 400 C) by Atmospheric-Pressure Plasma Enhanced Chemical Transport (pp.152-153)
• 4.T. Mori, H. Kakiuchi, K. Yasutake and H. Ohmi
  Direct Formation Method of Patterned Germanium Film on Glass (pp.154-155)
• 5.T. Ohnishi, K. Goto, H. Ohmi, H. Kakiuchi and K. Yasutake
  Low-Temperature Si Epitaxial Growth by Atmospheric-Pressure Plasma CVD (pp.156-157)
• 6.K. Nakamura, Y. Yamaguchi, K. Yokoyama, K. Higashida, H. Ohmi, H. Kakiuchi and K. Yasutake
  Characterization of Room-Temperature Silicon Oxide Films Deposited with High Rates in Atmospheric-Pressure VHF Plasma (pp.158-159)
• 7.K. Tabuchi, K. Ouchi, H. Ohmi, H. Kakiuchi and K. Yasutake
  Study on the Growth of Microcrystalline Si Films at Low Temperatures in Atmospheric-Pressure VHF Plasma (pp.160-161)
  
  

12th Asian Workshop on First-Principles Electronic Structure Calculations (Beijing, Oct. 26-28, 2009.)

• 1.Kouji Inagaki, Ryota Kanai, Kikuji Hirose, and Kiyoshi Yasutake
  First-principles molecular-dynamics analysis on hydrogen coverage in chemical vapor deposition of silicon thin film (P24)
  
  

13th European Conference on Applications of Surface and Interface Analysis (Oct. 18-23, 2009, Turkey.)

• 1.H.Ohmi,K.Kishimoto, H. Kakiuchi, K. Yasutake
  Low temperature epitaxial growth of Si film on Si(001) substrate by plasma enhanced chemical transport at sub atmospheric-pressure
  (p.303)
• 2.T.Mori, H. Kakiuchi, K. Yasuake, H. Ohmi
  Low-temperature and high-rate reduction of GeO2 on glass substrate by high pressure hydrogen plasma (p.186)
  
  

Abst. 216th ECS meeting (Oct. 1, 2009, Austria.)

• 1.T. Ohnishi, Y. Kirihata, H. Ohmi, H. Kakiuchi and K. Yasutake
  In Situ Doped Si Selective Epitaxial Growth at Low Temperatures by Atmospheric Pressure Plasma CVD (p.2499)
  
• 2.K Tabuchi, K. Ouchi, H. Ohmi, H. Kakiuchi and K. Yasutake
  Characterization of High-Rate Deposited Microcrystalline Si Films Prepared Using Atmospheric-Pressure Very High-Frequency Plasma
  (p.2510)
  
  

24th European Photovoltaic Solar Energy Conference and Exhibition, (Sept. 1, 2009, Hamburg).

• 1.H. Ohmi, D. Kamada, H. Kakiuchi and K. Yasutake
  Elimination Property of Metal-Impurities from MG-Si by Atmospheric-Pressure Plasma Enhanced Chemical Transport (3AV.1.19.)
  
• 2.T. Mori, A. Goto, H. Kakiuchi, K. Yasutake and H. Ohmi
  Photo-Electrical Property of the Poly-Si Film Prepared by Atmospheric-Pressure Plasma Enhanced Chemical Transport (3AV.1.18.)
  
  

Book of Abst. of The 23rd Int. Conf. on Amorphous and Nanocrystalline Semiconductors (ICANS 23)　　　 (Aug. 1, 2009, The Netherlands).

• 1.Y. Yamaguchi, K. Nakamura, H. Ohmi, H. Kakiuchi and K. Yasutake
  Investigation of Deposition Characteristics and Properties of High-Rate Deposited SiNx Films Prepared at low temperatures (100–300 C) by Atmospheric-Pressure Plasma CVD (p. 22)
• 2.K. Ouchi, K. Tabuchi, H. Ohmi, H. Kakiuchi and K. Yasutake
  Characterization of Microcrystalline Si Films Deposited at Low Temperatures with High Rates by Atmospheric-Pressure Plasma CVD (p.42)
  
  

Ext. Abst. 1st Int. Symp. on Atomically Controlled Fabrication Technology,
-Surface and Thin Film Processing-, Feb. 16-17, 2009, Icho-Kaikan, Osaka University, Japan).

• 1.K. Yasutake, H. Ohmi and H. Kakiuchi
  Atmospheric-Pressure Plasma Processes for Efficient Formation of Si Thin Films at Low Temperatures (pp.6-7)
  
• 2.H. Ohmi, T. Mori, A. Goto, H. Kakiuchi and K. Yasutake
  Structural and Electrical Property of the Poly-Si Film Prepared by Atmospheric-Pressure Plasma Chemical Transport (pp.36-37)
  
• 3.D. Kamada, T. Katayama, H. Kakiuchi, K. Yasutake and H. Ohmi
  FT-IR Analysis of Precursor Gases in Atmospheric-pressure Plasma Enhanced Chemical Transport Method (pp.38-39)
  
• 4.T. Mori, K. Iwamoto, A. Goto, H. Kakiuchi, K. Yasutake and H. Ohmi
  Low-Temperature and High-Rate Reduction of GeO2 on Glass Substrate by High Pressure Hydrogen Plasma (pp.40-41)
  
• 5.K. Iwamoto, H. Ohmi, H. Kakiuchi and K. Yasutake
  Study on Sterilization Factor of B. Atrophaeus by an Atmospheric-Pressure Mist Plasma (pp.42-43)
  
• 6.Y. Kirihata, T. Ohnishi, H. Ohmi, H. Kakiuchi and K. Yasutake
  Si Selective Epitaxial Growth at Low Temperatures by Atmospheric-Pressure Plasma CVD (pp.44-45)
  
• 7.K. Ouchi, K. Tabuchi, H. Ohmi, H. Kakiuchi, and K. Yasutake
  Characterization of Microcrystalline Si Films Deposited with High Rates by Atmospheric-Pressure (pp.46-47)
  
• 8.Y. Yamaguchi, K. Nakamura, H. Ohmi, H. Kakiuchi and K. Yasutake
  Room-Temperature Formation of Silicon Dioxide Films by Atmospheric-Pressure Plasma CVD UsingCylindrical Rotary Electrode (pp.48-49)
• 9.K. Inagaki, R. Kanai, K. Hirose and K. Yasutake
  First-Principles Molecular-Dynamics Analysis of Surface Reaction in Low-Temperature Si Thin Film Growth
  – Adsorption of Reactive Precursors onto H-Terminated Si Surface – (pp.50-51)
  
  

• H. Kakiuchi, H. Ohmi, and K. Yasutake
  Formation of silicon carbide at low temperatures by chemical transport of silicon induced by atmospheric pressure H2/CH4 plasma
  Thin Solid Films 516 (2008) 6580-6584.
  
  
• K. Yasutake, H. Ohmi, Y. Kirihata and H. Kakiuchi
  High-quality epitaxial Si growth at low temperatures by atmospheric pressure plasma CVD
  Thin Solid Films 517 (2008) 242-244.
  
  
• H. Ohmi, K. Kishimoto, H. Kakiuchi and K. Yasutake
  Impacts of noble gas dilution on Si film structure prepared by atmospheric pressure plasma enhanced chemical transport
  J. Phys. D: Appl. Phys. 41 (2008) 195208 (8pp).
  
  
• H. Kakiuchi, H. Ohmi, R. Inudzuka, K. Ouchi and K. Yasutake
  Enhancement of film-forming reactions for microcrystalline Si growth in atmospheric-pressure plasma using porous carbon electrode
  J. Appl. Phys. 104 (2008) 053522-1-8.
  
  
• K. Inagaki, K. Hirose and K. Yasutake
  First-principles analysis of He and H atom incidence onto hydrogen-terminated Si(001) 2 × 1 surface
  Surf. Interface Anal. 40 [6-7] (2008) 1088-1091.
  
  
• Hiroaki Kakiuchi, Hiromasa Ohmi, Masatoshi Aketa, Ryota Nakamura and Kiyoshi Yasutake
  Heteroepitaxial growth of cubic SiC on Si using very-high-frequency plasma at atmospheric pressure
  Surf. Interface Anal. 40 [6-7] (2008) 974-978.
  
  
• Daiki Kamada, Kazuya Kishimoto, Hiroaki Kakiuchi, Kiyoshi Yasutake and Hiromasa Ohmi
  High-rate preparation of thin Si films by atmospheric-pressure plasma enhanced chemical transport
  Surf. Interface Anal. 40 [6-7] (2008) 979-983.
  
  
• Y. Kirihata, T. Nomura, H. Ohmi, H. Kakiuchi and K. Yasutake
  In situ B-doped Si epitaxial growth at low temperatures by atmospheric-pressure plasma CVD
  Surf. Interface Anal. 40 [6-7] (2008) 984-987.
  
  
• Kouji Inagaki, Kikuji Hirosea and Kiyoshi Yasutake
  First-principles analysis of He and H atom incidence onto hydrogen-terminated Si(001) 2 × 1 surface
  Surf. Interface Anal. 40 [6-7] (2008) 1088-1091.
  
  
• Tetsuya Ikuta, Shigeru Fujita, Hayato Iwamoto, Shingo Kadomura, Takayoshi Shimur, Heiji Watanabe and Kiyoshi Yasutake
  Selective epitaxial growth of in situ carbon-doped silicon on silicon substrates
  Surf. Interface Anal. 40 [6-7] (2008) 1122-1125.
  
  
• Hiroaki Kakiuchi, Hiromasa Ohmi, Makoto Harada, Heiji Watanabe and Kiyoshi Yasutake
  SiO2 Formation by Oxidation of Crystalline and Hydrogenated Amorphous Si in Atmospheric Pressure Plasma Excited by Very High Frequency Power
  Jpn. J. Appl. Phys. 47 [3] (2008) 1884-1888.
  
  
• Takayoshi SHIMURA, Kohta KAWAMURA, Masahiro ASAKAWA, Heiji WATANABE, Kiyoshi YASUTAKE, and Atsushi OGURA
  Characterization of Strained Si Wafers by Synchrotron X-Ray Topography
  Photon Factory Activity Report 2006 vol.24 (2008) p. 267.
  
  
• T. Ikuta, S. Fujita, H. Iwamoto, S. Kadomura, T. Shimura, H. Watanabe and K. Yasutake
  Investigation of In-situ Boron-Doped Si Selective Epitaxial Growth by Comparison with Arsenic Doping
  Jpn. J. Appl. Phys. 47 [4] (2008) 2452-2455.
  
  
• T. Shimura, K. Kawamura, M. Asakawa, H. Watanabe, K. Yasutake, A. Ogura, K. Fukuda, O. Sakata, S. Kimura, H. Edo, S. Iida and M. Umeno
  Characterization of strained Si wafers by X-ray diffraction techniques
  J. Mater. Sci.: Materials in Electronics (2008).
  
  

Abst. 11th Int. Conf. on Plasma Surface Engineering (PSE 2008), Garmisch-Partenkirchen, Germany, Sept. 15-19, (2008) .

• 1.H. Ohmi, K. Kishimoto, H. Kakiuchi and K. Yasutake
  Simple dry etching method for Si related materials without etching source gases by atmospheric pressure plasma enhanced chemical transport (pp.434)
  
  

• H. Kakiuchi,H. Ohmi,K. Yasutake
  Materials Science Research Trends
  Nova Science Publishers, New York，2008年10月
  

• H. Ohmi, K. Yasutake, Y. Hamaoka and H. Kakiuchi
  Metal induced hydrogen effusion from amorphous silicon
  Appl. Phys. Lett. 91 [24] (2007) 241901-1-3.
  
  
• H. Kakiuchi, H. Ohmi, M. Harada, H. Watanabe and K. Yasutake
  Low-temperature formation of SiO2 layers using a two-step atmospheric pressure plasma-enhanced deposition-oxidation process
  Appl. Phys. Lett. 91 [16] (2007) 161908-1-3.
  
  
• T. Ikuta, S. Fujita, H. Iwamoto, S. Kadomura, T. Shimura, H. Watanabe and Kiyoshi Yasutake
  Suppression of surface segregation and heavy arsenic doping into silicon during selective epitaxial chemical vapor deposition under atmospheric pressure
  Appl. Phys. Lett. 91 [9] (2007) 092115-1-3.
  
  
• Hiromasa Ohmi, Hiroaki Kakiuchi, Yoshinori Hamaoka and Kiyoshi Yasutake
  Silicon film formation by chemical transport in atmospheric-pressure pure hydrogen plasma
  J. Appl. Phys. 102 [2] (2007) 023302-1-8.
  
  
• H. Watanabe, S. Horie, H. Arimura, N. Kitano, T. Minami, M. Kosuda, T. Simura, and K. Yasutake
  Interface Engineering by PVD-Based In-Situ Fabrication Method for Advanced Metal/High-k Gate Stacks
  ECS Transactions 6 (2007) 71-85.
  
  
• Y. Naitou, A. Ando, H. Ogiso, S. Kamiyama, Y. Nara, K. Yasutake and H. Watanabe
  Investigationi of local charged defects within high-temperature annealed HfSiOn/SiO2 gate stacks by scanning capacitance spectroscopy
  J. Appl. Phys. 101 [8] (2007) 083704-1-6.
  
  
• H. Kakiuchi, H. Ohmi, M. Harada, H. Watanabe, and K. Yasutake
  Significant enhancement of Si oxidation rate at low temperatures by atmospheric pressure Ar/O2 plasma
  Appl. Phys. Lett. 90 [15] (2007) 151904-1-3.
  
  
• K. Yasutake, N. Tawara, H. Ohmi, Y. Terai, H. Kakiuchi, H. Watanabe, and Y. Fujiwara
  Photoluminescence Study of Defect-Free Epitaxial Silicon Filmes Grown at Low Temperatures by Atmospheric Pressure Plasma Chemical Vapor Deposition
  Jpn. J. Appl. Phys. 46 [4B] (2007) 2510 - 2515.
  
  
• T. Ikuta, Y. Minami, S. Fujita, H. Iwamoto, S. Kadomura, T. Shimura, H. Watanabe, and K. Yasutake
  Atmospheric In situ Arsenic-Doped SiGe Selective Epitaxial Growth for Raised-Extension N-type Metal-Oxide-Semiconductor Field-Effect Transistor
  Jpn. J. Appl. Phys. 46 [4B] (2007) 1916-1920.
  
  
• H.Watanabe, S. Horie, T.Minami, N. Kitano, M. Kosuda, T. Shimura, and K. Yasutake
  Impact of Physical Vapor Deposition-Based In situ Fabrication Method on Metal/High-k Gate Stacs
  Jpn. J. Appl. Phys. 46 [4B] (2007) 1910 - 1915.
  
  
• H. Kakiuchi, H. Ohmi, M. Harada, H. Watanabe, and K. Yasutake
  Highly efficient oxidation of silicon at low temperatures using atmospheric pressure plasma
  Appl. Phys. Lett. 90 [9] (2007) 091909-1-3.
  
  
• S. Yoshida, Y. Watanabe, Y. Kita, T. Shimura, H. Watanabe, K. Yasutake, Y. Akasaka, Y. Nara, and K. Yamada
  Interface reactions at TiN/HfSiON gate stacs: Dependence on the electrode structure and deposition method
  Sci. Technol. Adv. Mater. 8 (2007) 219-224.
  
  
• T. Ikuta, Y. Miyanami, S. Fujita, H. Iwamoto, S. Kadomura, T. Shimura, H. Watanabe, and K. Yasutake
  Heavy arsenic doping of silicon grown by atmospheric pressure selective epitaxial cheical vapor deposition
  Sci. Technol. Adv. Marer. 8 (2007) 142-145.
  
  
• H. Kakiuchi, H. Ohmi, M. Harada, H. Watanabe, and K. Yasutake
  Formation of Silicon Dioxide Layers at Low Temperatures (150 - 400°C) by Atmospheric Pressure Plasma Oxidation of Silicon
  Sci. Technol. Adv. Mater. 8 (2007) 137-141.
  
  
• K. Manabe, T. Hase, T. Tatsumi, H. Watanabe and K. Yasutake
  Mechanism of Suppressed Change in Effective Work Functions for Impurity-Doped Fully Silicided NiSi Electrodes on Hf-Based Gate Dielectrics
  Jpn. J. Appl. Phys. 46 [1] (2007) 91-97.
  
  
• H. Komoda, C. Moritani, K. Takahashi, H. Watanabe and K. Yasutake
  Sample Tilting Technique for Preventing Electrostatic Discharge during High-current FIB Gas-assisted Etching with XeF2
  Microelectronics Reliability 47 [1] (2007) 74-81.
  
  

Ext. Abst. Int. 21st Century COE Symp. on Atomistic Fabrication Technology 2007,
(October 15-17, 2007, Icho-Kaikan, Osaka University, Japan).

• 1. D. Kamada, H. Ohmi, K. Kishimoto, H. Kakiuchi, and K. Yasutake
  High Rate Deposition of Si Film at Low Temperature by Atmospheric-Pressure Plasma Enhanced Chemical Transport (pp.103-104)
• 2. Y. Kirihata, T. Nomura, H. Ohmi, H. Kakiuchi, and K. Yasutake
  In situ B doped Si Epitaxial Growth at Low Temperatures by Atmospheric Pressure Plasma CVD (pp.101-102)
  
• 3. K. Iwamoto, H. Ohmi, H. Kakiuchi, and K. Yasutake
  Sterilization Process of B. atrophaeus Using Atmospheric Pressure Mist Plasma (pp.99-100)
  
• 4. K. Kishimoto, H. Ohmi, T. Mori, D. Kamada, H. Kakiuchi, and K. Yasutake
  Selective Growth of Silicon by Atmospheric Pressure Plasma Enhanced Chemical Transport (pp97-98)
  
• 5. R. Inudzuka, H. Ohmi, H. Kakiuchi, and K. Yasutake
  High-Rate Deposition of Microcrystalline Silicon Films at Low Temperatures by Atmospheric Pressure Plasma Chemical Vapor
  Deposition (pp.95-96)
  
• 6. D. Ishimoto, Y. Yamaguchi, K. Nakamura, H. Ohmi, H. Kakiuchi, and K. Yasutake
  Deposition Characteristics of SiNx Films by Atmospheric Pressure Plasma CVD Using Cylindrical Rotary Electrode (pp.93-94)
  
• 7. H. Kakiuchi, H. Ohmi, and K. Yasutake
  3C-SiC Formation by Chemical Transport of Silicon Induced by Atmospheric Pressure H2/CH4 Plasma (pp.91-92)
  
• 8. K. Inagaki, S. Kakeya, K. Hirose, and K. Yasutake
  First-principles Analysis of Low-temperature Growth of Epitaxial Silicon Films by Atomospheric Pressure Plasma Chemical Vapor
  Deposition - Surface Local Temperature - (pp.69-70)
  
• 9. H. Ohmi, H. Kakiuchi, and K. Yasutake
  Atmospheric-pressure Plasma Enhanced Chemical Transport as Earth-Conscious Manufacturing Technology (pp.9-10)
  
• 10. H. Kakiuchi, H. Ohmi, M. Harada, H. Watanabe, and K. Yasutake
  Low-temperature Oxidation of Crystalline and Hydrogenated Amorphous Si Using Very High Frequency Plasma at Atmospheric Pressure
  (pp.7-8)
  
• 11. T. Ikuta, S. Fujita, H. Iwamoto, S. Kadomura, T. Shimura, H. Watanabe, and K. Yasutake
  Selective Epitaxial Growth of In-situ Carbon-doped Si on Si Substrates (pp.139-140)
  
  

12th Int. Conf. on Defects-Recognition, Imaging and Physics in Semiconductors

• 1. T. Shimura, K. Kawamura, M. Asakawa, H. Watanabe, K. Yasutake, A. Ogura, K. Fukuda, O. Sakata, S. Kimura, and M. Umeno
  Characterization of Strained Si Wafers by Synchrotron X-ray Microbeam and Topography
  
  

Ext. Abst. 2007 Int. Conf. on Solid State Devices and Materials, Tsukuba.

• 1. K. Kutsuki, G. Okamoto, T. Hosoi, T. Shimura, K. Yasutake nad H. Watanabe
  Characterization of Pure Ge3N4 Dielectric Layers Formed by High-Density Plasma Nitridation (pp.1034-1035)
  
• 2. T. Ikuta, Y. Miyanami, S. Fujita, H. Iwamoto, S. Kadomura, T. Shimura, H. Watanabe and K. Yasutake
  In-situ Doped Si Selective Epitaxial Growth for Raised Source/Drain Extension CMOSFET (pp.368-369)
  
  

Abst, 2007 MRS Spring Meeting, San Fransisco.

• 1. Y. Kita, S. Yoshida, T. Shimura, K. Yasutake, H. Watanabe, K. Shiraishi, Y. Nara, and K. Yamada
  Systematic Study on Effective Work Function Instability of Metal/High-k Gate Stacks. (p.153)
  
• 2. M. Harada, Y. Watanabe, S. Okda, T. Shimura, K. Yasutake, and H. Watanabe
  Investigation of 4H-SiC MIS Devices with AlON/SiO2 Layered Structures. (p.163)
  
  

Ext. Abst. 2007 IMFEDK International Meeting for Future of Electron Devices, Kansai.

• 1. Y. Watanabe, M. Harada, S. Okada, T. Shimura, K. Yasutake, and H. Watanabe
  Electric properties of 4H-SiC MIS devices with AlON/SiO2 stacked gate dielectrics (pp.83-84)
  
  

Abst. 211th ECS Meeting, Chicago.

• 1. <Invited> H. Watanabe, S. Horie, H. Arimura, N. Kitano, T. Minami, M. Kosuda, T. Simura, and K. YasutakeInterface Engineering by PVD-Based In-Situ Fabrication Method for Advanced Metal/High-k Gate Stacks (p. 655)
  
  

Digest of Technical Papers of the 14th International Workshop on Active-Matrix Flatpanel Displays and Devices, 11-13 July 2007, Hyogo, Japan.

• 1.<Invited> H. Kakiuchi, H. Ohmi, M. Harada, H. Watanabe, and K. Yasutake
  Low-Temperature Oxidation Process of Silicon Using Atmospheric Pressure Plasma (pp. 223-226)
  
  

Proc. of the 20th Symposium on Plasma Science for Materials (SPSM-20), 21-22 June 2007, Nagoya, Japan.

• 1. H. Kakiuchi, H. Ohmi, and K. Yasutake
  Formation of Silicon Carbide at Low Temperatures by Chemical Transport of Silicon Induced by Atmospheric Pressure H2/CH4 Plasma (p.45)
  
• 2. K. Kishimoto, D. Kamada, H. Ohmi, H. Kakiuchi, and K. Yasutake
  Structure Control of Si Films Prepared by Atmospheric-Pressure Plasma Enhanced Chemical Transport (p.7)
  
  

Abstracts 5th Int. Conf. on Silicon Epitaxy and Heterostructures (ICSI-5) May 20-25, 2007, Marseille.

• 1. Y. Kirihata, N. Tawara, H. Ohmi, H. Kakiuchi, H. Watanabe and K. Yasutake
  Characterization of epitaxial Si films grown at low-temperatures by atmospheric pressure plasma CVD (pp. 271 - 272)
  
• 2. K. Yasutake, H. Ohmi, Y. Kirihata, H. Kakiuchi
  High-quality epitaxial Si growth at low temperatures by atmospheric pressure plasma CVD (pp. 234 - 235)
  
  

• K. Manabe, T. Hase, T. Tatsumi, H. Watanabe and K. Yasutake
  Mechanism for Fermi Level Pinning at Electrode/Hf-Based Dielectric Interface: Systematic Study of Dependence of Effective Work Functions for Polycrystalline Silicon and Fully Silicided NiSi Electrodes on Hf Density at Interface
  Jpn. J. Appl. Phys. 45 [12] (2006) 9053-9057.
  
  
• M. Shimizu, H. Ohmi, H. Kakiuchi and K. Yasutake
  Lifetime measurement of metastable fluorine atoms using electron cyclotron resonance plasma source
  J. Vac. Sci. Technol. A24 [6] (2006) 2133-2138.
  
  
• K. Yasutake, H. Watanabe, H. Ohmi and H. Kakiuchi
  Ge Nuclei for Fabrication of Poly-Si Thin Films on Glass Substrates
  ECS Transactions 3 [8] (2006) 215-225.
  
  
• T. Shimura, M. Shimizu, S. Horiuchi, H. Watanabe and K. Yasutake
  Oxidation Saturation of SiGe Alloy on Silicon-on-Insulator Wafers
  ECS Transactions 3 [7] (2006) 1033.
  
  
• Hiromasa Ohmi, Hiroaki Kakiuchi, Kenichi Nishijima, Heiji Watanabe, and Kiyoshi Yasutake
  Low-Ttemperature Crystallization of Amorphous Silicon by Atmospheric-Pressure Plasma Treatment in H2/He or H2/Ar Mixture
  Jpn. J. Appl. Phys. 45 [10B] (2006) 8488-8493.
  
  
• H. Ohmi, H. Kakiuchi, N. Tawara, T. Wakamiya, T. Shimura, H. Watanabe and K. Yasutake
  Low-Temperature Growth of Epitaxial Si Films by Atmospheric Pressure Plasma Chemical Vapor Deposition Using Porous Carbon Electrode
  Jpn. J. Appl. Phys. 45 [10B] (2006) 8424-8429
  
  
• H. Kakiuchi, H. Ohmi, R. Nakamura, M. Aketa and K. Yasutake
  Structural Characterization of Polycrystalline 3C-SiC Films Prepared at High Rates by Atmospheric Pressure Plasma Chemical Vapor Deposition Using Monomethylsilane
  Jpn. J. Appl. Phys. 45 [10B] (2006) 8381-8387.
  
  
• Kazunori Fukuda, Takayoshi Yoshida, Takayoshi Shimura, Kiyoshi Yasutake, Masataka Umeno, and Satoshi Iida
  White X-ray Topography of Lattice Undulation in Bonded Silicon-on-Insulator Wafers
  Jpn. J. Appl. Phys. 45 [9A] (2006) 6795-6799.
  
  
• Takayoshi Shimura, Michihiro Shimizu, Shinichiro Horiuchi, Heiji Watanabe, Kiyoshi Yasutake, and Masataka Umeno
  Self-limiting oxidation of SiGe alloy on silicon-on-insulator wafers
  Appl. Phys. Lett. 89 [11] (2006) 111926-1-3.
  
  
• Kenzo Manabe, Kensuke Takahashi, Takashi Hase, Nobuyuki Ikarashi, Makiko Oshida, Toru Tatsumi, Hirohito Watanabe, Heiji Watanabe and Kiyoshi Yasutake
  Analysis of Origin of Threshold Voltage Change Induced by Impurity in Fully Silicided NiSi/SiO2 Gate Stacks
  Jpn. J. Appl. Phys. 45 [4B] (2006) 2919-2924.
  
  
• Heiji Watanabe, Shiniti Yoshida, Yasumasa Watanabe, Takayoshi Shimura, Kiyoshi Yasutake, Yasushi Akasaka, Yasuo Nara, Kunio Nakamura and Keisaku Yamada
  Thermal Degradation of HfSiON Dielectrics Caused by TiN Gate Electrodes and Its Impact on Electrical Properties
  Jpn. J. Appl. Phys. 45 [4B] (2006) 2919-2924.
  
  
• Hiromasa Ohmi, Hiroaki Kakiuchi, Kiyoshi Yasutake, Yasuji Nakahama, Yusuke Ebata, Kumayasu Yoshii and Yuzo Mori
  Influence of H2/SiH4 Ratio on the Deposition Rate and Morphology of Polycrysta lline Silicon Films Deposited by Atmospheric Pressure Plasma Chemical Vapor Deposition
  Jpn. J. Appl. Phys. 45 [4B] (2006) 3581-3586.
  
  
• H. Kakiuchi, H. Ohmi, Y. Kuwahara, M. Matsumoto, Y. Ebata, K. Yasutake, K. Yoshii and Y. Mori
  High-Rate Deposition of Intrinsic Amorphous Silicon Layers for Solar Cells Using Very High Frequency Plasma at Atmospheric Pressure
  Jpn. J. Appl. Phys. 45 [4B] (2006) 3587-3591.
  
  
• K. Yasutake, H. Ohmi, H. Kakiuchi, T. Wakamiya and H. Watanabe
  Characterization of Epitaxial Si Films Grown by Atmospheric Pressure Plasma Chemical Vapor Deposition Using Cylindrical Rotary Electrode
  Jpn. J. Appl. Phys. 45 [4B] (2006) 3592-3597.
  
  
• H. Kakiuchi, H. Ohmi, M. Aketa, K. Yasutake, K. Yoshii and Y. Mori
  Effect of hydrogen on the structure of high-rate deposited SiC on Si by atmospheric pressure plasma chemical vapor deposition using high-power-density condition
  Thin Solid Films 496 (2006) 259-265.
  
  
• K. Arima, T. Shigetoshi, H. Kakiuchi, and M. Morita
  Surface photovoltage measurements of intrinsic hydrogenated amorphous Si films on Si wafers on the nanometer scale
  Physica B 376-377 (2006) 893-896.
  
  
• H. Komoda, M. Yoshida, Y. Yamamoto, K. Iwasaki, I. Nakatani, H. Watanabe and K. Yasutake
  Novel Charge Neutralization Techniques Applicable to Wide Current Range of FIB Processing in FIB-EB Combined System
  Microelectronics Reliability 46 [12] (2006) 2085-2095
  
  

Materials Research Society (MRS) Spring Meeting, 2006, San Francisco, CA

• 1. Heiji Watanabe, Shigenari Okada, Hiromasa Ohmi, Hiroaki Kakiuchi and Kiyoshi Yasutake
  Surface Cleaning and Etching of 4H-SiC(0001) using Atmospheric Pressure Hydrogen Plasma
  
  

Extended Abstracts of 2006 International Workshop on Dielectric Thin Films for Future ULSI Devices-Science and Technology.

• 1. Y. Naitou, A. Ando, H. Ogiso, H. Watanabe, K. Yasutake
  Dopant Concentration Influence on Scanning Capacitance Microscopy Imaging in Ultrathin SiO2 Films (pp.21-22)
  
• 2. Takayoshi Shimura, Eiji Mishima, Kohta Kawamura, Heiji Watanabe, and Kiyoshi Yasutake
  Structural Change of the Interfacial SiO2 Layer between HfO2 Layers and Si Substrates
  
  

Extended Abstract of International Meeting for Future of Electron Devices, Kansai (2006).

• 1. Takayoshi Shimura, Eiji Mishima, Heiji Watanabe, and Kiyoshi Yasutake
  Application of Synchrotron X-ray Diffraction Methods to Thin Film Materials used in Semiconductor Devices (pp.25-26)
  
  

Abstractbook of the 8th Asia-Pacific Conference on Plasma Science and Technology (8th APCPST), Cairns, Australia, 2006.

• 1. Yasushi Oshikane, Hiroaki Kakiuchi, Kazuya Yamamura, Kiyoshi Yasutake, Takafumi Karasawa, Colin M. Western, Akinori Oda, Katsuyoshi Endo
  Rotational and vibrational temperature of Fulcher-alpha band emitted by hydrogen molecules in capacitive VHF CVD plasma process at atmosphere (p269)
  
• 2. H. Ohmi, H. Kakiuchi, Y. Nakahama, Y. Ebata, K. Yasutake, K. Yoshii, and Y. Mori
  Influences of substrate and its temperature on the structure of polycrystalline Si films deposited by atmospheric pressure plasma chemical vapor
  deposition (p.214)
  
• 3. H. Kakiuchi, H. Ohmi, Y. Nakahama and K. Yasutake
  Influence of Gas Composition on the Structure of Silicon Nitride Films Prepared at High Rates by Atmospheric Pressure Plasma CVD (p.52)
  
  

Europhysics Conference Abstract of 18thEurophysics Conference on the Atomic and Molecular Physics of Ionised Gases (18th ESCAMPIG), Lecce, Italy, 2006.

• 1. Yasushi Oshikane, Kazuya Yamamura, Koji Ueno, Hiroaki Kakiuchi, Kiyoshi Yasutake, Takafumi Karasawa, Colin M. Western, Akinori Oda, Akihiko Nagao, Katsuyoshi Endo
  N2 C3Pu-B3Pg band spectroscopy in open-air type CVM plasma with He/CF4/O2 and H2 Fulcher-a band spectroscopy in atmospheric He/H2/SiH4 CVD plasma (pp.395-396)
  
  

Extended Abstracts of the 2006 International Conference on Solid State Devices and Materials, Yokohama, 2006.

• 1. Y. Naitou, A. Ando, H. Ogiso, S. Kamiyama, Y. Nara, H. Watanabe and K. Yasutake
  Spatial Fluctuation of Electrical Properties in Hf-Silicate Film Observed with Scanning Capacitance Microscopy (pp.392-393)
  
• 2. S. Horie, T. Minami, N. Kitano, M. Kosuda, H. Watanabe and K. Yasutake
  Impact of PVD-based In-situ Fabrication Method for Metal/High-k Gate Stacks (pp.414-415)
• 3. N. Tawara, H. Ohmi, Y. Terai, H. Kakiuchi, H. Watanabe, Y. Fujiwara and K. YasutakeCharacterization of Epitaxial Silicon Films Grown by Atmospheric Pressure Plasma Chemical Vapor Deposition at Low Temperatures(450-600℃) (pp.1094-1095)
  
  

Extended Abstracts of International 21st Century COE Symposium on Atomistic Fabrication Technology, Osaka, Japan, 2006.

• 1. S. Horiuchi, M. Shimizu, T. Shimura, H. Watanabe and K. Yasutake
  Oxidation Rate Diminishment of SiGe Epitaxial Films on Silicon-on-insulator Wafers (pp.155-156)
  
• 2. Y. Naitou, A. Ando, H. Ogiso, S. Kamiyama, Y. Nara, H. Watanabe and K. Yasutake
  The Origin of Long-range Contrast in Hf-silicate Films Observed by Scanning Capacitance Microscopy (pp.153-154)
  
• 3. K. Manabe, T. Hase, T. Tatsumi, H. Watanabe and K. Yasutake
  Systematic Study on Effective Work Functions for Poly-Si and Fully Silicided NiSi Electrodes on Hf-based Gate Dielectrics (pp.151-152)
  
• 4. S. Yoshida, Y. Watanabe, Y. Kita, T. Shimura, H. Watanabe, K. Yasutake, Y. Akasaka, Y. Nara and K. Yamada
  Interface Reactions at TiN/HfSiON Gate Stacks Depending on the Electrode Structure and Deposition Method (pp.147-148)
  
• 5. Takayoshi Shimura, Eiji Mishima, Kohta Kawamura, Heiji Watanabe, and Kiyoshi Yasutake
  Structural Change of the Thermal Oxide Layer on Si Substrates by Diffusion of Atomic Oxygen (pp.57-58)
  
• 6. M. Harada, H. Kakiuchi, H. Ohmi, H. Watanabe and K. Yasutake
  High Rate Oxidation of Si Surfaces by using Atmospheric Pressure Plasma (pp.77-78)
  
• 7. M. Harada, H. Ohmi, H. Kakiuchi, H. Watanabe and K. Yasutake
  Atmospheric Pressure Hydrogen Plasma Treatment of 4H-SiC(0001) Surfaces Using Porous Carbon Electrode (pp.75-76)
  
• 8. Kazuya Kishimoto, Daiki Kamada, Hiromasa Ohmi, Hiroaki Kakiuchi and Kiyoshi Yasutake
  Fabrication of Si1-xGex and SiC films by atmospheric pressure plasma enhanced chemical transport (pp.73-74)
  
• 9. R. Nakamura, H. Kakiuchi, H. Ohmi, M. Aketa, K. Yasutake, K. Yoshii and Y. Mori
  Deposition Characteristics of Polycrystalline Silicon Carbide Films Prepared at High-rates by Atmospheric Pressure Plasma CVD (pp.71-72)
  
• 10. N. Tawara, H. Ohmi, Y. Terai, T. Shimura, H. Kakiuchi, H. Watanabe, Y. Fujiwara and K. Yasutake
  Characterization of Epitaxial Si Films Grown at Low Temperatures by Atmospheric Pressure Plasma Chemical Vapor Deposition (pp.69-70)
  
• 11. K. Minami, C. Yoshimoto, H. Ohmi, T. Shimura, H. Kakiuchi, H. Watanabe and K. Yasutake
  Fabrication of Polycrystalline Silicon Thin Films on Glass Substrates Using Ge Naono-islands as Nuclei (pp.65-66)
  
• 12.Y. Oshikane, H. Kakiuchi, K. Yamamura, C. M. Western, K. Yasutake, K. Endo
  Ro-vibronic Structure in the Q-branch in the Spectra of Hydrogen Fulcher-a Band Emission in the Atmospheric Pressure Plasma CVD Process Driven at 150 MHz (pp.49-50)
  
• 13. Hiromasa Ohmi,Yoshinori Hamaoka, Yoshiki Ogiyama, Hiroaki Kakiuchi, and Kiyoshi Yasutake
  Development of atmospheric pressure plasma enhanced chemical transport toward Eco-friendly manufacturing (pp.9-10)
  
• 14. H. Kakiuchi, H. Ohmi, Y. Kuwahara, R. Inuzuka and K. Yasutake
  High-Rate Deposition of Microcrystalline Silicon Films at Low Temperatures by Atmospheric Pressure Plasma Chemical Vapor Deposition (pp.7-8)
  
  

Meeting of 210th Meeting of The Electrochemical Society and XXI Congreso de la Sociedad Mexicana de Electroquimica, Oct. 29-Nov. 3, 2006. Cancun, Mexico, (2006) #1575.

• 1.<Invited> K. Yasutake, H. Watanabe, H. Ohmi and H. Kakiuchi
  Ge Nuclei for Fabrication of Poly-Si Thin Films on Glass Substrates (#1575)
  
  

Proc. of 21st European Photovoltaic Solar Energy Conference and Exhibition, 4-8 September 2006, Dresden, Germany.

• 1. H. Kakiuchi, H. Ohmi, Y. Kuwahara, R. Inuzuka and K. Yasutake
  High-Rate Deposition and Characterization of Microcrystalline Silicon Films Prepared by Atmospheric Pressure Plasma CVD (pp.1582-1586)
  
• 2. H. Ohmi, K. Kishimoto, Y. Hamaoka, Y. Ogiyama, H. Kakiuchi and K. Yasutake
  Preparation of Poly-Si Films by Atmospheric Pressure Plasma Enhanced Chemical Transport
  
  

Proc. 28th Int. Symp. on Dry Process (DPS 2006), 29-30 November 2006, Nagoya, Japan.

• 1. Yoshiki Ogiyama, Hiromasa Ohmi, Keiji Iwamoto, Hiroaki Kakiuchi, and Kiyoshi Yasutake
  Atmospheric pressure plasma sterilization with water micro-mist (pp. 175-176)
• 2. H. Kakiuchi, H. Ohmi, R. Nakamura, M. Aketa, and K. Yasutake
  Characterization of Silicon Carbide Layers Formed by Atmospheric Pressure Plasma Carbonization of Silicon (pp. 33-34)
  
  

Abstracts of 37th IEEE Semiconductor Interface Specialists Conference 3-3.

• 1. S. Yoshida, Y. Kita, T. Ando, K. Tai, H. Iwamoto, T. Shimura, H. Watanabe and K. Yasutake
  Physical and Electrical Characterization of HfSix/HfO2 Gate Stacks for High-Performance nMOSFET Application
  
  

Abst. Int. Symp. on Surface Science and Nanotechnology.

• 1. Y. Naitou, A. Ando, H. Ogiso, S. Kamiyama, Y. Nara, K. Nakamura, H. Watanabe and K. Yasutake
  Mapping of the local dielectric properties of Hf-based high-k films by scanning capacitance microscopy (p.133)
  
  

Proceedings of the 6th International Conference on Reactive Plasmas and 23rd Symposium on Plasma Processing, Matsushima/Sendai, Japan, 2006.

• 1. Y. Oshikane, K. Yamamura, H. Kakiuchi, A. Oda, C. Western, A. Nagao, K. Endo
  Spectroscopic Study of Rotational Structures in Electronic Band Spectra Emitted by Diatomic Molecules in Capacitively Coupled Atmospheric CVM and CVD Plasmas Driven at 150 MHz (pp. 743-744)
  
• 2. Y. Oshikane, K. Yamamura, H. Kakiuchi, A. Oda, C. Western, A. Nagao, K. Endo
  Low-Temperature Growth of Epitaxial Silicon Films by Atmospheric Pressure Plasma Chemical Vapor Deposition (pp. 625-626)
  
• 3. H. Ohmi, H. Kakiuchi, H. Watanabe and K. Yasutake
  Characterization of high-pressure (200-760 Torr), stable glow plasma of pure hydrogen by measuring etching properties of Si and optical emission spectroscopy (pp. 301-302)
  
• 4. H. Kakiuchi, H. Ohmi, R. Nakamura, M. Aketa, K. Yasutake, K. Yoshii and Y. Mori
  Deposition Characteristics of Polycrystalline Silicon Carbide Films Prepared at High-Rates by Atmospheric Pressure Plasma CVD (pp. 111-112)
  
• 5. H. Ohmi, H. Kakiuchi, H. Watanabe and K. Yasutake
  Low-Temperature Crystallization of Amorphous Silicon by Atmospheric Pressure Plasma Treatment in H2/He or H2/Ar Mixtures (pp. 67-68)
  
  

• Y. Naitou, A. Ando, H. Ogiso, S. Kamiyama, Y. Nara, K. Nakamura, H. Watanabe and K. Yasutake
  Spatial fluctuation of dielectric properties in Hf-based high-k gate films studied by scanning capacitance microscopy
  Appl. Phys. Lett. 87 (2005) 252908-1-3
  
  
• 大参宏昌，垣内弘章，中濱康治，江畑祐介，安武潔，芳井熊安，森勇藏
  大気圧プラズマCVDにより高速形成した多結晶Si薄膜の構造に対するSiH4濃度の影響
  精密工学会誌 71 [11] (2005) 1393-1398.
  
  
• Hirotaka Komoda, Ikuko Nakatani, Heiji Watanabe and Kiyoshi Yasutake
  Antistatic Technique for Suppressing Charging in Focused Ion Beam Systems Using Microprobing and Ion-Beam-Assisted Deposition
  Jpn. J. Appl. Phys. 44 [11] (2005) 7907-7909.
  
  
• Heiji Watanabe, Satoshi Kamiyama, Naoto Umezawa, Kenji Shiraishi, Shiniti Yoshida, Yasumasa Watanabe, Tsunetoshi Arikado, Toyohiro
  Chikow, Keisaku Yamada, and Kiyoshi Yasutake
  Role of Nitrogen Incorporation into Hf-based High-k Gate Dielectrics for Termination of Local Current Leakage Paths
  Jpn. J. Appl. Phys. 44 (2005) L1333-L1336.
  
  
• H. Kakiuchi, Y. Nakahama, H. Ohmi, K. Yasutake, K. Yoshii, Y. Mori
  Investigation of deposition characteristics and properties of high-rate deposited silicon nitride films prepared by atmospheric pressure plasma chemical vapor deposition
  Thin Solid Films 479 [1-2] (2005) 17-23.
  
  
• Yuzu Mori, Kazuya Yamamura, Katsuyoshi Endo, Kazuto Yamauchi, Kiyoshi Yasutake, Hidekazu Goto, Hiroaki Kakiuchi, Yasuhisa Sano, Hidekazu Mimura
  Creation of Perfect Surfaces
  J. Cryst. Growth 275 (2005) 39-50.
  
  
• H. Komoda, M. Yoshida, Y. Yamamoto, K. Iwasaki, H. Watanabe, and K. Yasutake
  Charge Neutralization Using Focused 500eV Electron Beam in Focused Ion Beam System
  Jpn. J. Appl. Phys. 44 [17] (2005) L515-517.
  
  
• H. Kakiuchi, M. Matsumoto, Y. Ebata, H. Ohmi, K. Yasutake, K. Yoshii, Y. Mori
  Characterization of intrinsic amorphous silicon layers for solar cells prepared at extremely high rates by atmospheric pressure plasma chemical vapor deposition
  J. Non-Crystalline Solids 351 [8-9] (2005) 741-747.
  
  
• Takayoshi Shimura, Kazunori Fukuda, Kiyoshi Yasutake, Takuji Hosoi, and Masataka UmenoComparison of Ordered Structure in Buried Oxide Layers in High-dose, Low-dose, and Internal-thermal-oxidation Separation-by-implanted-oxygen Wafers
  Thin Solid Films 476 (2005) 125-129.
  
  
• Takayoshi Shimura, Kiyoshi Yasutake, Masataka Umeno, and Masao Nagase
  X-ray Diffraction Measurements of Internal Strain in Si Nanowires Fabricated using a Self-limiting Oxidation
  Appl. Phys. Lett. 86 [7] (2005) 071903-1-3.
  
  
• K. Yasutake, H. Kakiuchi, H. Ohmi, K. Yoshii, and Y. Mori
  Defect-free growth of epitaxial silicon at low temperatures (500 - 800°C) by atmospheric pressure plasma chemical vapor deposition
  Appl. Phys. A 81 [6] (2005) 1139-1144.
  
  

Extended Abstracts of the 2005 International Conference on Solid State Devices and Materials,Kobe, 2005.

• 1. Y. Hamaoka, H.Ohmi, H. Kakiuchi and K. Yasutake
  Study of Effects of Metal layer on hydrogen desorption from hydrogenated amorphous silicon using temperature programmed desorption
  (pp.760 - 761)
• 2. Hiroaki Kakiuchi, Hiromasa Ohmi, Yasuhito Kuwahara, Mitsuhiro Matsumoto, Yusuke Ebata, Kiyoshi Yasutake, Kumayasu Yoshii and Yuzo Mori
  High-Rate Deposition of Intrinsic Amorphous Silicon Layers for Solar Cells using Very High Frequency Plasma at Atmospheric Pressure
  (pp.758 - 759)
• 3. Takuya Wakamiya, Hiromasa Ohmi, Hiroaki Kakiuchi, Heiji Watanabe, Kiyoshi Yasutake, Kumayasu Yoshii, and Yuso Mori
  High-Rate Growth of Defect-Free Epitaxial Si at Low Temperatures by Atmoshperis Pressure Plasma CVD (pp.756 - 757)
• 4. H.Ohmi, H. Kakiuchi, K. Yasutake, Y. Nakahama, Y. Ebata, K. Yoshii and Y.Mori
  Influence of H2/SiH4 ratio on the deposition rate and morphology of polycrystalline silicon films deposited by atmospheric pressure plasma CVD
  (pp.372 - 373)
  
• 5.Heiji Watanabe, Shiniti Yoshida, Yasumasa Watanabe, Takayoshi Shimura, Kiyoshi Yasutake, Yasushi Akasaka, Yasuo Nara, Kunio Nakamura, and Keisaku Yamada
  Thermal Degradation of HfSiON Dielectrics Caused by TiN Gate Electrodes and Its Impact on Electrical Properties (pp.244 - 245)
  
  

Physics and Chemistry of SiO2 and the Si-SiO2 Interface 5

• 1. Takayoshi Shimura, Eiji Mishima, Heiji Watanabe, Kiyoshi Yasutake, Masataka Umeno, Kousuke Tatsumura, Takanobu Watanabe, Iwao Ohdomari, Keisaku Yamada, Satoshi Kamiyama, Yasushi Akasaka, Yasuo Nara, and Kunio Nakamura
  Ordered Structure in the Thermal Oxide Layer on Silicon Substrates
  
  

nternational Symposium on Surface Science and Nanotechnology.

• 1. Y. Naitou, A. Ando, H. Ogiso, S. Kamiyama, Y. Nara, K. Nakamura, H. Watanabe and K. Yasutake
  Mapping of the local dielectric properties of Hf-based high-k films by scanning capacitance microscopy (p.133)
  
  

The 23rd International Conference on Defects in Semiconductors
(July 24-29, 2005, Awaji Island, Hyogo, Japan).

• 1. K. Arima, T. Shigetoshi, H. Kakiuchi and M. Morita
  Surface photovoltage measurement of amorphous Si films on Si wafer by STM/STS (p.379)
  
  

Abstracts of 36th IEEE Semiconductor Interface Specialists Conference, 2005, Arlington, VA.

• 1. H. Watanabe, S. Yoshida, Y. Watanabe, E. Mishima, K. Kawamura, Y. Kita, T. Shimura, K. Yasutake, Y. Akasaka, Y. Nara, K. Shiraishi and
  K. Yamada
  Effects of Intrinsic and Extrinsic Reactions at Metal/High-k Interfaces on Electrical Properties of Gate Stacks
  
  

• Kiyoshi YASUTAKE, Hiromasa OHMI, Hiroaki KAKIUCHI, Heiji WATANABE, Kumayasu YOSHII and Yuzo MORI
  Size and Density Control of Crystalline Ge Islands on Glass Substrates by Oxygen Etching
  Jpn. J. Appl. Phys. 43 [12A] (2004) L1552-L1554.
  
  
• 大参宏昌，垣内弘章，安武潔，中濱康治，江畑裕介，芳井熊安，森勇藏
  大気圧プラズマCVDプロセスによる多結晶Siの高速成膜プロセスにおける成膜速度の決定因子
  精密工学会誌 70 [11] (2004) 1418-1422.
  
  
• K. Arima, H. Kakiuchi, M. Ikeda, K. Endo, M. Morita, and Y. Mori
  Scanning tunneling microscopy/ spectroscopy observation of intrinsic hydrogenated amorphous silicon surface under light irradiation
  Surface Science 572 (2004) 449-458.
  
  
• Takayoshi Shimura, Kazunori Fukuda, Kiyoshi Yasutake, and Masataka Umeno
  Characterization of SOI wafers by synchrotron X-ray topography
  Eur. Phys. J. Appl. Phys. 27 (2004) 439-442.
  
  
• 垣内弘章，大参宏昌，中澤弘一，安武潔，芳井熊安，森勇藏
  大気圧プラズマCVD法によるアモルファスSiCの高速成膜に関する研究（第２報）－成膜パラメータの最適化による膜構造の改善－
  精密工学会誌 70 [8] (2004) 1075-1079.
  
  
• 垣内弘章，中濱康治，大参宏昌，安武潔，芳井熊安，森勇藏
  大気圧プラズマCVD法により高速形成したSiNx薄膜の構造と成膜パラメータの相関
  精密工学会誌 70 [7] (2004) 956-960.
  
  
• 森勇藏, 垣内弘章, 芳井熊安, 安武潔, 大参宏昌, 江畑裕介, 中村恒夫, 竹内博明, 北條義之, 古川和彦
  大気圧プラズマCVDによる超高速形成アモルファスSiを発電層とした薄膜太陽電池の基礎特性
  精密工学会誌 70 [4] (2004) 562-567.
  
  
• K. Arima, H. Kakiuchi, M. Ikeda, K. Endo, M. Morita, and Y. Mori
  Visible Light Irradiation Effects on STM Observations of Hydrogenated Amorphous Silicon Surfaces
  Jpn. J. Appl. Phys. 43 (2004) 1891-1895.
  
  
• Kazunori Fukuda, Takayoshi Yoshida, Takayoshi Shimura, Kiyoshi Yasutake, and Masataka Umeno
  Synchrotron X-ray Topography of Lattice Undulation of Bonded Silicon-on-Insulator Wafers
  Jpn. J. Appl. Phys. 43 [3] (2004) 1081-1087.
  
  
• 森勇藏, 垣内弘章, 大参宏昌, 芳井熊安, 安武潔, 中濱康治
  大気圧プラズマCVD法によるSiNxの成膜特性
  精密工学会誌 70 [2] (2004) 292-296.
  
  
• 森勇藏, 芳井熊安, 安武潔, 垣内弘章, 大参宏昌, 中濱康治, 江畑祐介
  回転電極型大気圧プラズマCVD法による多結晶Siの成膜特性
  精密工学会誌 70 [1] (2004) 144-148.
  
  

SPring-8 User Experimenta Report, No.12 (2003B) 110.

• 1. Takayoshi Shimura, Eiji Mishima, Kiyoshi Yasutake, Shigeru Kiumura, and Masataka Umeno
  Observation of Concentric Circular Patterns of State-of-the-art SOI Wafers by Large Area X-ray Topography
  
  

The 14th international conference on crystal growth.

• 1. Yuzo Mori, Kazuya Yamamura, Katsuyoshi Endo, Kazuto Yamauchi, Kiyoshi Yasutake, Hidekazu Goto, Hiroaki Kakiuchi, Yasuhisa Sano,
  Hidekazu Mimura
  Creation of perfect surfaces
  
  

SPring-8 User Experiment Report, No.13, 2004A

• 1. Takayoshi Shimura, Eiji Mishima, Kiyoshi Yasutake, Shigeru Kimura, and Masataka Umeno
  Quasi Phase-contrast Imaging of the Variation in Lattice Spacing of Very Thin Si Layers
  
  

The Proceedings of the 4th International Symposium on Advanced Science and Technology of Silicon Materials

• 1. Takayoshi Shimura, Eiji Mishima, Kazunori Fukuda, Kiyoshi Yasutake, and Masataka Umeno
  Development of Characterization Technique of SOI Wafers by Synchrotron X-ray Topography
  
  

Proceedings of Thin Film Materials & Devices Meeting, Nov.12-13, 2004, Nara-Shi Asunara Conference Hall,

• 1. K. Yasutake, H. Watanabe, H. Ohmi, H. Kakiuchi, S. Koyama, D. Nakajima and K. Minami
  Formation of Crystalline Ge Islands on Glass Substrates for Growth of Large-Grained Polycrystalline Si Thin Films (pp.19-24)
  
  

• Y. Mori, H. Kakiuchi, K. Yoshii and K. Yasutake
  High-Rate Deposition of Amorphous Silicon Films by Atmospheric Pressure Plasma Chemical Vapor Deposition
  Crystal Growth Technology, ed. H. J. Scheel and T. Fukuda (John Wiley & Sons, 2003), pp. 645-652.
  
  
• Y. Mori, K. Yoshii, K. Yasutake, H. Kakiuchi, H. Ohmi and K. Wada
  High-Rate Growth of Epitaxial Silicon at Low Temperatures (530-690℃) by Atmospheric Pressure Plasma Chemical Vapor Deposition
  Thin Solid Films 444 (2003) 138-145.
  
  
• Y. Mori, H. Kakiuchi, K. Yoshii, K. Yasutake, and H. Ohmi
  Characterization of Hydrogenated Amorphous Si1-xCx Films Prepared at Extremely High Rates Using Very High Frequency Plasma at Atmospheric Pressure
  J. Phys. D: Appl. Phys. 36 [23] (2003) 3057-3063.
  
  
• 豊田洋通, 井出敞, 八木秀次, 垣内弘章, 森勇藏
  大気圧以上の高圧力下でのプラズマCVDによるダイヤモンドの高速形成
  精密工学会誌 69 [10] (2003) 1444-1448.
  
  
• 森勇藏，芳井熊安，安武潔，垣内弘章，大参宏昌，和田勝男
  大気圧プラズマCVD法によるエピタキシャルSiの低温かつ高速成長（第1報）―エピタキシャルSi成長条件の検討―
  精密工学会誌 69 [6] (2003) 861-865.
  
  
• K. Fukuda, T. Yoshida, T. Shimura, K. Yasutake and M. Umeno
  Large-Area X-Ray Topographs of Lattice Undulation of Bonded Silicon-On-Insulator Wafers
  Jpn. J. Appl. Phys. 42 [2A] (2003) L117-L119.
  
  

Proc. 3rd World Conf. and Exhibition on Photovoltaic Solar Energy Conversion, 12 May 2003, Osaka, Japan.

• 1. M. Matsumoto, M. Shima, S. Okamoto, K. Murata, M. Tanaka, S. Kiyama, H. Kakiuchi, K. Yasutake, K. Yoshii , K. Endo and Y. Mori
  Extremely High-Rate Deposition of Silicon Thin Films Prepared by Atmospheric Plasma CVD Method with a Rotary Electrode (pp. 1552-1555)
  
  

Extended Abstracts of the 2003 International Conference on Solid State Devices and Materials, Tokyo, 2003.

• 1. Kenta Arima, Hiroaki Kakiuchi, Manabu Ikeda, Katsuyoshi Endo, Mizuho Morita, and Yuzo Mori
  Visible Light Irradiation Effects on Atomic-Scale Observations of Hydrogenated Amorphous Silicon Films by Scanning Tunneling Microscopy
  (pp. 500-501)
  

The 7th international Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures, Nara, 2003.

• 1. Kenta Arima, Hiroaki Kakiuchi, Manabu Ikeda, Katsuyoshi Endo, Mizuho Morita, and Yuzo Mori
  Scanning tunneling microscopy observations of intrinsic hydrogenated amorphous silicon surface under visible light irradiation (p. 256)
  

SPring-8 User Experiment Report No.10 (2002B) 114

• 1. Takayoshi Shimura, Takayoshi Yoshida, Kazunori Fukuda, Kiyoshi Yasutake, and Masataka Umeno
  Characterization of SOI Wafers by X-ray Topography and Photoluminescence Method
  
  

Photon Factory Activity Report, 20 (2003) 265

• 1. Takayoshi Shimura, Kazunori Fukuda, Takayoshi Yoshida, Kiyoshi Yasutake, and Masataka Umeno
  Observation of lattice undulation of commercial bonded silicon-on-insulator wafers by synchrotron X-ray topography
  
  

The 6th Asian Workshop on First-Principles Electronic Structure Calculations, Tsukuba, Nov. 10 (2003).

• 1. K. Inagaki, K. Yasutake, H. Goto, K. Hirose
  First-Principles Molecular-Dynamics Simulations on Extraction of Hydrogen Molecule from Hydrogen Terminated Si(001) 2x1 Surface by Hydrogen
  Radical
  
  

Photon Factory Activity Report, 20 (2003) 84

• 1. Takayoshi Shimura, Kazunori Fukuda, Takuji Hosoi, Kiyoshi Yasutake, and Masataka Umeno
  Comparison of ordered structure in buried oxide layers in high-dose, low-dose, and ITOX SIMOX wafers
  
  

SPring-8 User Experiment Report No.10 (2002B) 125

• 1. Takayoshi Shimura, Eiji Mishima, Kiyoshi Yasutake, Shigeru Kimura, and Masataka Umeno
  Characterization of SOI Wafers by Large Area X-ray Topography
  
  

• K. Fukuda, T. Yoshida, T. Shimura, K. Yasutake and M. Umeno
  Observation of Lattice Undulation of Commercial Bonded SOI Wafers by Synchrotron X-ray Topography
  Jpn. J. Appl. Phys. 41 [11B] (2002) L1325-L1327.
  
  
• 森勇藏，垣内弘章，芳井熊安，安武潔，松本光弘，江畑裕介
  大気圧プラズマCVD法による太陽電池用アモルファスSiの超高速成膜
  精密工学会誌 68 [8] (2002), 1077-1081.
  
  
• 大参宏昌　安武 潔　松井優貴　竹内昭博　垣内弘章　芳井熊安　森 勇藏
  注入同期法による色素レーザの増幅
  精密工学会誌, 67 [7] (2001) 1108-1113.
  
  
• 森勇藏，芳井熊安，安武潔，垣内弘章，木山精一，樽井久樹，堂本洋一
  大気圧プラズマCVD法によるアモルファスSiの高速成膜に関する研究（第3報）－高速形成a-Si薄膜の電気・光学特性－
  精密工学会誌 67 [5] (2001), 829-833.
  
  
• 大参宏昌　安武 潔　清水正男　垣内弘章　竹内昭博　芳井熊安　森 勇藏
  Li原子ビームのレーザコリメーション
  精密工学会誌, 67 [3] (2001) 433-437.
  
  
• Chiyo Inoue, Naoya Mizuno, Satoshi Ogura, Yuichiro Hanayama, Shinji Hattori, Katsuyoshi Endo, Kiyoshi Yasutake, Mizuho Morita, and Yuzo Mori
  Time Variations of Organic Compound Concentrations in a Newly Constructed Cleanroom
  J. Inst. Environmental Science and Technology, 44 [2] (2001) 23-29.
  
  
• M. Shimizu, K. Yasutake, H. Ohmi, A. Takeuchi, H. Kakiuchi, K. Yoshii, Y. Mori
  Lifetime of metastable fluorine atoms
  Appl. Phys. B72 [2] (2001) 227-230.
  
  
• 大参宏昌　安武 潔　清水正男　垣内弘章　竹内昭博　芳井熊安　森 勇藏
  中性原子ビーム速度分光装置の開発
  精密工学会誌, 66 [12] (2000) 1938-1942.
  
  
• 森 勇藏　垣内弘章　芳井熊安　安武 潔
  大気圧プラズマCVDシステムにおけるプロセス雰囲気の清浄化
  精密工学会誌, 66 [11] (2000) 1802-1806.
  
  
• 森 勇藏 芳井熊安 安武潔 中野元博 垣内弘章 木山精一 樽井久樹 堂本洋一
  大気圧プラズマCVD法によるアモルファスSiの高速成膜に関する研究（第2報）　―成膜速度の高速化―
  精密工学会誌, 66 [10] (2000) 1636-1640.
  
  
• Y. Mori, K. Yoshii, H. Kakiuchi, and K. Yasutake
  Atmospheric pressure plasma chemical vapor deposition system for high-rate deposition of functional materials
  Rev. Sci. Instrum. 71 [8] (2000) 3173-3177.
  
  
• Y.Mori, K.Yoshii, K.Yasutake, and H.Kakiuchi
  High-Rate Deposition of Amorphous Silicon Films by Atmospheric Pressure Plasma CVD
  Technology Reports of the Osaka University, 50 [2373] (2000) 55-62.
  
  
• 井上智代　水野直哉　小倉 哲　花山勇一郎　服部進司　遠藤勝義　安武 潔　　森田瑞穂　森 勇藏
  新設クリーンルーム内における有機物濃度の経時変化とその発生源
  クリーンテクノロジー, 10 [7] (2000) 47-51.
  
  
• K. Yasutake, H. Ohmi, M. Shimizu, A. Takeuchi, H. Kakiuchi, K. Yoshii, Y. Mori
  Velocity spectrometer for a neutral atomic beam
  Appl. Phys. B71 [6] (2000) 787-793.
  
  
• 森 勇藏　垣内弘章　芳井熊安　安武 潔
  大気圧プラズマCVD法によるアモルファスSiCの高速成膜に関する研究（第1報） ―成膜速度および膜構造の検討―
  精密工学会誌, 66 [6] (2000) 907-911.
  
  
• 清水正男　文 承啓　辻井ます美　安武 潔　芳井熊安
  半導体素子保護用ポリイミド表面のプラズマ処理
  精密工学会誌, 66 [5] (2000) 725-730.
  
  
• 森 勇藏　芳井熊安　安武 潔　垣内弘章　木山精一　樽井久樹　堂本洋一
  大気圧プラズマCVD法によるアモルファスSiの高速成膜に関する研究（第1報） ―回転電極型大気圧プラズマCVD装置の設計・試作―
  精密工学会誌, 65 [11] (1999) 1600-1604.
  
  
• H. Ohmi, K. Yasutake, M. Shimizu, T. Yasukawa, A. Takeuchi, H. Kakiuchi, K. Yoshii, M. Umeno, and Y. Mori
  Creation of Mono-Velocity Neutral Atomic Beam
  Precision Science and Technology for Perfect Surface, JSPE Publication Series No. 3, (1999) 630-635.
  
  
• Takeuchi, M. Ono, K. Yasutake, H. Kakiuchi, and K. Yoshii
  Doping of Single Crystalline AlN Thin Films Grown on Si(111) by Plasma-Assisted MBE
  Precision Science and Technology for Perfect Surface, JSPE Publication Series No. 3, (1999) 624-629.
  
  
• Y. Mori, K. Yoshii, K. Yasutake, H. Kakiuchi, Y. Domoto, H. Tarui, and S. Kiyama
  High-Rate Deposition of Amorphous Si Thin Films by Atmospheric Pressure Plasma CVD
  Precision Science and Technology for Perfect Surface, JSPE Publication Series No. 3, (1999) 537-542.
  
  
• M. Shimizu, H. Ohmi, K. Yasutake, K. Yamane, R. Tanaka, A. Takeuchi, H. Kakiuchi, K. Yoshii, and Y. Mori
  Development of Anisotropic Dry Etching Method Using Laser-Collimated Fluorine Radical Beam
  Precision Science and Technology for Perfect Surface, JSPE Publication Series No. 3, (1999) 450-455.
  
  
• 清水正男　文 承啓　西川 明　加藤直子　安武 潔　芳井熊安
  半導体素子特性に対するコンタクトホール内部の残留有機物薄膜の影響
  精密工学会誌, 65 [4] (1999) 592-597.
  
  
• K. Yasutake, A. Takeuchi, H. Kakiuchi, and K. Yoshii
  Molecular beam epitaxial growth of AlN single crystalline films on Si(111) using radio-frequency plasma assisted nitrogen radical source
  J. Vac. Sci. Technol. A16 [4] (1998) 2140-2147.
  
  
• Y. Suzaki, T. Shikama, S. Yoshioka, K. Yoshii, K. Yasutake
  Concentration and thermal release of hydrogen in amorphous silicon carbide films by rf sputtering
  Thin Solid Films 311 (1997) 207-211.
  
  
• K. YASUTAKE, H. KAKIUCHI, A. TAKEUCHI, K. YOSHII, H. YAMADA, H. KAWABE
  Thermal and photo-induced surface damage in paratellurite
  J. Mater. Sci. 32 (1997) 6595-6600.
  
  
• K. YASUTAKE, H. KAKIUCHI, A. TAKEUCHI, K. YOSHII, H. KAWABE
  Deep-level characterization in semi-insulating GaAs by photo-induced current and Hall effect transient spectroscopy
  J. Mater. Sci.: Materials in Electronics 8 (1997) 239-245.
  
  
• Kiyoshi YASUTAKE, Akihiro TAKEUCHI, Hiroaki KAKIUCHI, Yoshimasa OKUYAMA, Kumayasu YOSHII and Hideaki KAWABE
  Low Temperature Growth of InGaAs/GaAs Strained-Layer Single Quantum Wells
  Int. J. Japan Soc. Prec. Eng. 31 [1] (1997) 47-52.
  
  
• 安武 潔　垣内弘章　竹内昭博　芳井熊安　川辺秀昭
  光電流および光ホール電圧過渡分光法による半絶縁性GaAs単結晶中の欠陥準位評価
  精密工学会誌, 63 [2] (1997) 264-268.
  
  
• 垣内弘章　芳井熊安　安武 潔　竹内昭博　広瀬喜久治　森 勇藏
  高周波スパッタ蒸着法による多結晶Ｓｉの低温成膜に関する研究（第2報） －Si薄膜の構造および電気・光学特性－
  精密工学会誌, 63 [2] (1997) 233-237.
  
  
• 安武 潔　竹内昭博　垣内弘章　奥山佳正　芳井熊安　川辺秀昭
  InGaAs/GaAs 単一歪み量子井戸薄膜の低温成長に関する研究
  精密工学会誌, 63 [1] (1997) 60-64.
  
  
• 安武 潔　垣内弘章　竹内昭博　芳井熊安　山田裕一　川辺秀昭
  TeO2単結晶表面の熱損傷および光照射損傷に関する研究
  精密工学会誌, 62 [8] (1996) 1335-1339.
  
  
• 広瀬喜久治 後藤英和 森 勇藏 芳井熊安 安武潔 垣内弘章 坂本正雄 堤 建一
  Si(001)表面におけるアンモニア吸着過程の第一原理分子動力学シミュレーション
  精密工学会誌, 61 [12] (1995) 1755-1759.
  
  
• 垣内弘章　川辺秀昭　芳井熊安　安武 潔　竹内昭博　広瀬喜久治　森 勇藏
  高周波スパッタ蒸着法による多結晶Ｓｉの低温成膜に関する研究（第１報）
  精密工学会誌, 61 [6] (1995) 829-833.
  
  
• K. Yasutake, Z. Chen, S. K. Pang, and A. Rohatgi
  Modeling and characterization of interface state parameters and surface recombination velocity at plasma enhanced chemical vapor deposited SiO2-Si interface
  J. Appl. Phys. 75 [4] (1994) 2048-2054.
  
  
• 須崎嘉文, 鹿間共一, 垣内弘章, 芳井熊安, 川辺秀昭
  スパッタ法により作製したa-Si(:H)/a-SiC(:H)超格子薄膜の量子井戸効果
  精密工学会誌 60 (1994) 393-396.
  
  
• 須崎嘉文, 中村茂昭, 垣内弘章, 芳井熊安, 川辺秀昭
  スパッタ法により作製したa-Si/a-SiC超格子薄膜の構造
  精密工学会誌 60 (1994) 138-142.
  
  
• Z. Chen, S. K. Pang, K. Yasutake, and A. Rohatgi
  Plasma-enhanced chemical-vapor-deposited oxide for low surface recombination velocity and high effective lifetime in silicon
  J. Appl. Phys. 74 [4] (1993) 2856-2859.
  
  
• Z. Chen, K. Yasutake, A. Doolittle and A. Rohatgi
  Record low SiO2/Si interface state density for low temperature oxides prepared by direct plasma-enhanced chemical vapor deposition
  Appl. Phys. Lett. 63 [15] (1993) 2117-2119.
  
  
• Y. Mori, K. Yamamura, K. Yamauchi, K. Yoshii, T. Kataoka, K. Endo, K. Inagaki, and H. Kakiuchi
  Plasma CVM (chemical vaporization machining) – An Ultra Precision Machining with High Pressure Reactive Plasma –
  Technology Reports of the Osaka University, 43 [2156] (1993) 261-266.
  
  
• Y. Mori, K. Yamamura, K. Yamauchi, K. Yoshii, T. Kataoka, K. Endo, K. Inagaki, and H. Kakiuchi
  Plasma CVM (chemical vaporization machining): an ultra precision machining technique using high- pressure reactive plasma
  Nanotechnology 4 (1993) 225-229.
  
  
• Y. Suzaki, T. Shikama, H. Kakiuchi, A. Takeuchi, K. Yoshii, and H. Kawabe
  Structure and quantum size effect of a-Si(:H)/a-SiC(:H) multilayer films
  J. Magnetism and Magnetic Materials 126 (1993) 22-24.
  
  
• K. YASUTAKE, K. SUGIURA, H. INOUE, A. TAKEUCHI, M. UEMURA, K. YOSHII and H. KAWABE
  Dislocations and Ultrasonic Attenuation in Paratellurite
  phys. stat. sol. (a)125 (1991) 489-502.
  
  
• K.Yoshii, Y.Suzaki, A.Takeuchi, K.Yasutake and H.Kawabe
  CRYSTALLIZATION BEHAVIOR OF AMORPHOUS Si1-xCx FILMS PREPARED BY R.F. SPUTTERING
  Thin Solid Films 199 (1991) 85-94.
  
  
• Kiyoshi YASUTAKE, Yoshiharu TANAKA, Akihiro TAKEUCHI, Kumayasu YOSHII and Hideaki KAWABE
  MINORITY CARRIER DIFFUSION LENGTH AND DEFECT LEVELS IN PLASTICALLY DEFORMED SILICON CRYSTALS
  Defect Control in Semiconductors, II (1990) p.1437-1442.
  
  
• Kiyoshi YASUTAKE, Yoshito KONISHI, Kaoru ADACHI, Kumayasu YOSHII, Masataka UMENO and Hideaki KAWABE
  Fracture of GaAs Wafers
  Jpn. J. Appl. Phys. 27 [12] (1988) 2238-2246.
  
  
• Kiyoshi Yasutake, Shinji Shimizu, and Hideaki Kawabe
  Analysis of the effective stresses acting on twinning partial dislocations in silicon
  J. Appl. Phys. 61 [3] (1987) 947-955.
  
  
• Kiyoshi Yasutake, Shinji Shimizu, Masataka Umeno, and Hideaki Kawabe
  Velocity of twinning partial dislocations in silicon
  J. Appl. Phys. 61 [3] (1987) 940-946.
  
  
• K. YASUTAKE, M. IWATA, K. YOSHII, M. UMENO, H. KAWABE
  Crack healing and fracture strength of silicon crystals
  J. Mater. Sci. 21 (1986) 2185-2192.
  
  
• K. YASUTAKE, J. D. STEPHENSON, M. UMENO and H. KAWABE
  On deformation twins in silicon single crystals
  Phil. Mag. A53 [3] (1986) L41-47.
  
  
• K. YASUTAKE, M. UMENO, and H. KAWABE
  Oxygen Precipitation and Microdefects in Czochralski-Grown Silicon Crystals
  phys. stat. sol. (a)83 (1984) 207-217.
  
  
• K. Yasutake, M. Umeno and H. Kawabe
  DEFORMATION TWINNING OF SILICON SINGLE CRYSTALS BELOW 600℃
  Acta Crystallogr. A40 (1984) C-334.
  
  
• Kiyoshi YASUTAKE, Masataka UMENO, Hideaki KAWABE, Hiroshi NAKAYAMA, Taneo NISHINO and Yoshihiro HAMAKAWA
  Measurement of Residual Stress in Bent Silicon Wafers by Means of Photoluminescence
  Jpn. J. Appl. Phys. 21 [12] (1982) 1715-1719.
  
  
• Kiyoshi YASUTAKE, Junichi MURAKAMI, Masataka UMENO and Hideaki KAWABE
  Mechanical Properties of Heat-Treated CZ-Si Wafers from Brittle to Ductile Temperature Range
  Jpn. J. Appl. Phys. 21 [5] (1982) L288-290.
  
  
• K. YASUTAKE, M. UMENO, and H. KAWABE
  Compression Tests of Heat-Treated Czochralski-Grown Silicon Crystals
  phys. stat. sol. (a)69 (1982) 333-341.
  
  
• Kiyoshi YASUTAKE, Masataka UMENO, Hideaki KAWABE, Hiroshi NAKAYAMA, Taneo NISHINO and Yoshihiro HAMAKAWA
  Oxygen-Related Donors Stable at 700-800℃ in CZ-Si Crystals
  Jpn. J. Appl. Phys. 21 [1] (1982) 28-32.
  
  
• Kiyoshi YASUTAKE, Masataka UMENO, Hideaki KAWABE, Hiroshi NAKAYAMA, Taneo NISHINO and Yoshihiro HAMAKAWA
  Oxygen-Related Donors Generated at 800℃ in CZ-Si
  Jpn. J. Appl. Phys. 19 [9] (1980) L544-546.
  
  
• K. Yasutake, M. Umeno, and H. Kawabe
  Mechanical Properties of Heat-Treated Czochralski-Grown Silicon Crystals
  Appl. Phys. Lett. 37 [9] (1980) 789-791.
  
  
• H. Kawabe, M. Umeno, T. Yamazaki and K. Yasutake
  Dislocation Movements in Si Single Crystals in the Brittle Temperature Range
  Bull. Japan Soc. Prec. Eng. 12 [4] (1978) 211-212.
  
  

Tech. Digest of the 4th Conference on Lasers and Electro-Optics, CLEO/Pacific Rim 2001, Makuhari Messe, 2001, Vol. II, pp. 124-125.

• 1. H. Ohmi, K. Yasutake, Y. Matsui, A. Takeuchi, H. Kakiuchi, K. Yoshii, and Y. Mori
  Dual mode amplification of dye laser by injection-seeding method
  
  

Proc. of the COE Int. Symp. on Ultraprecision Science and Technology - Creation of Perfect Surface - , Osaka, 2001.

• 1. H. Ohmi, K. Yasutake, M. Shimizu, H. Kakiuchi, A. Takeuchi, K. Yoshii, and Y. Mori
  Formation of Monochromatic Atomic Beam for Nanofabrication (PP.251-256)
• 2. H. Toyota, T. Ide, H. Yagi, H. Kakiuchi and Y. Mori
  High rate synthesis of diamond by plasma CVD under higher pressure than atmospheric pressure (pp.227-232)
  
• 3. M. Nakano, K. Yasutake, H. Kakiuchi, Y. Yamauchi, K. Yoshii, T. Kataoka, and Y. Mori
  Numerical Simulation of Reactive Gas Flow in Atmospheric Pressure Plasma Chemical Vapor Deposition (AP-PCVD) Process (pp.221-226)
  
• 4. Y. Mori, K. Yoshii, K. Yasutake, H. Kakiuchi, H. Ohmi, and K. Wada
  Epitaxial Growth of Si by Atmospheric Pressure Plasma CVD －Effects of Temperature and Plasma Power on Crystallinity of the Si films －
  (pp.216-220.)
  
• 5. Y. Mori, K. Yoshii, K. Yasutake, H. Kakiuchi, H. Ohmi, and K. Wada
  Epitaxial Growth of Si by Atmospheric Pressure Plasma CVD -Growth Rate and Crystallinity- (pp.211-215)
  
• 6. Y. Mori, K. Yoshii, K. Yasutake, H. Kakiuchi, H. Ohmi, and K. Wada
  High-Rate Growth of Epitaxial Si by Atmospheric Pressure Plasma CVD (pp.205-210)
  
• 7. Y. Mori, H. Kakiuchi, K. Yoshii, and K. Yasutake
  Hydrogenated Amorphous Si1-xCx Films Fabricated at Extremely High Deposition Rate by Atmospheric Pressure Plasma CVD (pp.199-204)
  
• 8. Y. Mori, H. Kakiuchi, K. Yoshii, K. Yasutake, M. Matsumoto, and Y. Ebata
  High-Rate Deposition of Device-Grade Amorphous Si by Atmospheric Pressure Plasma CVD (pp.187-192)
  
  

Proc. of the 3rd Int. Symp. on Advanced Science and Technology of Silicon Materials, Kona, 2000.

• 1. K. Fukuda, T. Hosoi, T. Shimura, K. Yasutake, and M. Umeno
  Investigation of SOI Wafers by X-Ray Diffraction Techniques (pp.636-641)
  
  

2nd Int. School on Crystal Growth Technology, Book of Lecture Notes (2000) .

• 1. Y. Mori, K. Yamauchi, K. Yamamura, H. Kakiuchi and Y. Sano
  Development of New Machining Process for Ultra Precision Surface Preparation ---EEM, Plasma CVM, and Atmospheric Pressure Plasma CVD---
  (pp. 212-232)
  

Proceedings of 1996 The Japan-China Bilateral Symposium on Advanced Manufacturing Engineering, Hayama, 1996.

• 1. Y. Mori, K. Yoshii, T. Kataoka, K. Hirose, K. Yasutake, K. Endo, Y. Domoto, H. Tarui, S. Kiyama and H. Kakiuchi
  Atmospheric Pressure Plasma Chemical Vapor Deposition of Amorphous Silicon Films with High Growth Rate (pp.84-89)
  
• 2. K. Yasutake, A. Takeuchi, H. Kakiuchi, T. Hagiwara and K. Yoshii
  MBE Growth of AlN Single Crystalline Films on Si(111) Using RF-excited Nitrogen Source (pp.79-83)
  
  

Extended Abstruct of Workshop on Computational Methods as Applied to Industrial Problems, Tsukuba, 1995.

• 1. K. Yasutake, K. Hirose, H. Goto, Y. Mori, K. Yoshii, H. Kakiuchi, M. Sakamoto and K. Tsutsumi
  First-principles Molecular-dynamics Simulations of Ammonia Adsorption on Si(001) Surface (p.19)
  
  

Technical Digest of the 7th International Photovoltaic Science and Engineering Conference, Nagoya (1993) .

• 1. K. Yasutake, H. Kakiuchi, K. Yoshii, H. Kawabe, Z. Chen, S. K. Pang and A. Rohatgi
  Surface Recombination Velocities and Interface State Parameters at Si-SiO2 Prepared by Low Temperature Plasma Processes (pp.549-550)
  

Technical Digest of the Sixth Sunshine Workshop on Crystalline Silicon Solar Cells, Tokyo, 1993.

• 1. K. Yasutake, H. Kakiuchi, K. Yoshii, H. Kawabe, Z. Chen, S. K. Pang and A. Rohatgi
  Interface Parameters and Surface Recombination Velocity at PECVD SiO2/Si Interface (pp.113-116)
  
  

Proceedings of the 7th International Precision Engineering Seminar, Kobe, 1993.

• 1. H. Kawabe, Y. Mori, K. Yoshii, T. Kataoka, K. Yasutake, K. Endo, K. Yamauchi, K. Yamamura and H. Kakiuchi
  Low Temperature Growth of Polycrystalline Silicon Films by Plasma Chemical Vapor Deposition under Higher Pressure than Atmospheric Pressure
  (pp.554-565)
  
• 2. Y. Mori, K. Yamamura, K. Yamauchi, K.Yoshii, T.Kataoka, K.Endo, K. Inagaki and H. Kakiuchi
  Plasma CVM (chemical vaporization machining)-- A Chemical Machining Method With Equal Performances to Conventional
  Mechanical Methods from the Sense of Removal Rates and Spatial Resolutions – (pp.78-87)
  
  

Technical Digest of the 5th International Photovoltaic Science and Engineering Conference, Kyoto.

• 1. K. Yasutake, A. Takeuchi, K. Yoshii, H. Kawabe, J. Masuda and K. Kaneko
  Electrical Activity of Grain Boundaries in Polycrystalline Silicon (pp.307-310)
  

Technical Digest of the Second "SUNSHINE WORKSHOP on SOLAR CELLS, Shizuoka, 1990.

• 1. K. Yasutake
  Electrical Activity of Grain Boundaries in Polycrystalline Silicon (KEYNOTE ADDRESS) (pp.53-56)
  
  

Technical Digest of the 3rd International Photovoltaic Science and Engineering Conference, Tokyo.

• 1. K. Kaneko, T. Misawa, M. Asai, K. Nishida, A. Suzuki, R. Shimokawa, K. Yasutake and H. Kawabe
  High Efficiency Polycrystalline Silicon Solar Cells by 60 kg Cast Ingots (pp.810)
  
• 2. K. Yasutake, A. Takeuchi, Y. Tanaka, K. Yoshii and H. Kawabe
  Characterization of Cast Polycrystalline Silicon Using Temperature-Dependent Electron Beam Induced Current Method (pp.409-412)
  
  

Proceedings of International Symposium on "Behavior of Lattice Imperfections in Materials - In Situ Experiments with HVEM", Osaka, 1985.

• 1. S. INOUE, K. YOSHII, K. YASUTAKE and H. KAWABE
  Crystallization Behavior of a-SiC Films Prepared by Sputtering (pp.153-156)
  
• K. YOSHII, S. INOUE, K. YASUTAKE and H. KAWABE
  Microstructure and Mechanical Property of Ni-Cu Multiple Layer Films (pp.49-52)
  
• K. YASUTAKE, S. SHIMIZU, K. YOSHII and H. KAWABE
  Movements of Twinning Partial Dislocations in Silicon Single Crystals (pp.45-48)
  
  

Extended Abstruct of the 16th (1984 International) Conference on Solid State Devices and Materials, Kobe, 1984.

• 1. Y. FUJIWARA, A. KOJIMA, T. NISHINO, Y. HAMAKAWA, K. YASUTAKE, M. UMENO and H. KAWABE
  Characterization of Residual Stress in Semi-Insulating GaAs:Cr by Photoluminescence Method (pp.177-180)